2SB0942AP

Single Bipolar Transistors Overview

The Panasonic 2SB0942AP is a silicon PNP epitaxial planar power transistor designed for low-frequency power amplification. It operates in the TO-220F-A1 package with an isolated flange mount. The device supports a maximum collector current of -4 A and a peak collector current of -8 A. Voltage ratings vary by suffix: the 2SB0942 variant provides -60 V for both collector-base and collector-emitter voltages, while the 2SB0942A variant offers -80 V for these parameters. The emitter-base voltage rating is -5 V. Maximum collector power dissipation reaches 40 W at 25°C case temperature.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio (hFE) with satisfactory linearity
• Full-pack package design allowing heat sink installation via a single screw

Single Bipolar Transistors Applications

• Low-frequency power amplification circuits
• Complementary pairing with 2SD1267 or 2SD1267A NPN transistors
• General electronic equipment such as office and communication devices

Single Bipolar Transistors Procurement Notes

Verify the specific voltage rating required for your application before ordering. The 'A' suffix indicates an 80V rating, whereas the standard version is rated for 60V. Confirm that the TO-220F-A1 package dimensions align with your thermal management and mounting constraints. Ensure compliance with RoHS directives if applicable to your manufacturing standards.

Single Bipolar Transistors Selection Notes

Select this component when designing low-frequency power amplifiers requiring high linearity and robust current handling. Consider the complementary 2SD1267 series for push-pull configurations. Evaluate thermal resistance requirements based on the expected ambient temperature and available heat sink surface area to maintain safe junction temperatures during operation.

Single Bipolar Transistors Part Context

This transistor belongs to the Panasonic 2SB0942 series of silicon PNP epitaxial planar power transistors. These components are engineered specifically for low-frequency power amplification tasks. They are commonly utilized in general-purpose electronic equipment, including household appliances, measuring instruments, and office machinery, where reliable power switching and amplification are necessary.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SD1267 and 2SD1267A as complementary NPN counterparts. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the difference between the 2SB0942 and 2SB0942A variants?

The primary difference lies in the voltage ratings. The 2SB0942 is rated for -60 V collector-base and collector-emitter voltages, while the 2SB0942A is rated for -80 V for both parameters.

How is the hFE rank classification determined?

The forward current transfer ratio (hFE) is classified into ranks R, Q, and P based on measurements taken at VCE = -4 V and IC = -1 A. Rank R covers 40 to 90, Q covers 70 to 150, and P covers 120 to 250.

What is the maximum collector power dissipation?

The maximum collector power dissipation is 40 W when the case temperature (TC) is maintained at 25°C.