2SB1116-U-TP

Single Bipolar Transistors Overview

The MCC 2SB1116-U-TP is a PNP silicon plastic-encapsulated transistor designed for general-purpose amplification and switching applications. It operates with a collector current of 1.0A and a collector-base voltage of -50V, dissipating up to 0.35Watts. The device features a DC current gain (hFE) range of 300 to 600 at -0.1A collector current. Electrical characteristics include a collector-emitter breakdown voltage of -50V and a transition frequency of 70MHz. It supports an operating junction temperature range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Capable of handling 1.0A collector current with 0.35W power dissipation
• High DC current gain ranging from 300 to 600 in the U rank classification
• Operates reliably across a wide temperature range from -55°C to +150°C

Single Bipolar Transistors Applications

• General purpose amplifiers
• Electronic switching circuits
• Medium power linear applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix configuration when ordering. The standard part number includes the -TP designation indicating tape and reel packaging containing 3000 pieces per reel. Ensure compliance with moisture sensitivity level 1 requirements during storage and handling. Confirm that the selected variant meets the required hFE rank for the intended circuit design.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a PNP transistor with high current gain and moderate voltage ratings. The U rank offers a gain range of 300 to 600, suitable for efficient amplification stages. Consider the SOT-23 package constraints for thermal management if continuous operation near maximum power dissipation is expected. Verify compatibility with the target switching frequencies up to 70MHz.

Single Bipolar Transistors Part Context

This component belongs to the Micro Commercial Components discrete transistor portfolio. It utilizes planar silicon technology within a compact SOT-23 surface-mount package. The device is epoxy encapsulated meeting UL 94 V-0 flammability standards. It serves as a complementary counterpart to NPN variants in similar circuit topologies.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other PNP transistors in the SOT-23 package with comparable voltage and current ratings. Verify pinout compatibility and ensure the replacement device meets or exceeds the required hFE gain and power dissipation specifications for the specific application.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SB1116-U-TP?

The DC current gain (hFE) for the U rank ranges from 300 to 600 when measured at a collector current of -0.1A and VCE of -2.0V.

Does the 2SB1116-U-TP support halogen-free requirements?

Yes, halogen-free versions are available by adding the -HF suffix to the part number, such as 2SB1116-U-TP-HF.

What is the maximum collector-base breakdown voltage?

The maximum collector-base breakdown voltage (V(BR)CBO) is -60Vdc when measured at IC = -100µAdc and IE = 0.