Single Bipolar Transistors 2SB1117-AZ product image

2SB1117-AZ

$0.33
  • Description:SMALL SIGNAL BIPOLAR TRANS PNP
  • Series:-

SKU:dff8f3bb9345 Category: Brand:

  
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2SB1117-AZ is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is SMALL SIGNAL BIPOLAR TRANS PNP. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1117-AZ

  • Description:SMALL SIGNAL BIPOLAR TRANS PNP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):25 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 300mA, 3A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:135 @ 1A, 2V
  • Power - Max:1 W
  • Frequency - Transition:280MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:3-SSIP
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1117-AZ

2SB1117-AZ

Single Bipolar Transistors Overview

The 2SB1117-AZ is a PNP small-signal bipolar junction transistor manufactured by Renesas Electronics Corporation. It is housed in a 3-SSIP through-hole package and features a collector-emitter voltage (Vceo) of 25V. The device supports a maximum junction temperature of 150°C and offers a DC current gain (hFE) range of 135 to 600. This component is classified as obsolete within the manufacturer's portfolio.

Single Bipolar Transistors Feature Summary

  • PNP small-signal bipolar transistor configuration
  • Through-hole mounting via 3-SSIP package
  • High current gain range for signal amplification

Single Bipolar Transistors Applications

  • General-purpose signal switching
  • Small-signal amplification circuits
  • Low-power electronic control systems

Single Bipolar Transistors Procurement Notes

This component is officially listed as obsolete by Renesas Electronics Corporation. Procurement should focus on verifying stock availability from authorized distributors or secondary market suppliers. Ensure that any sourced units are genuine and match the specified 3-SSIP package and electrical parameters. Due to its obsolete status, long-term supply continuity cannot be guaranteed, requiring careful inventory planning for existing designs.

Single Bipolar Transistors Selection Notes

Engineers selecting this part must account for its obsolete status when designing new products. The 25V Vceo rating and 135-600 hFE range define its operational limits. For new designs, alternative modern PNP transistors with similar specifications and active production status should be evaluated to ensure supply chain stability and compliance with current manufacturing standards.

Single Bipolar Transistors Part Context

The 2SB1117-AZ belongs to the Bipolar Power Transistors category offered by Renesas Electronics Corporation. As a PNP type, it serves legacy applications requiring small-signal handling. Its classification as obsolete indicates it is no longer recommended for new designs, reflecting the manufacturer's shift toward newer semiconductor technologies and product lines.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Given the obsolete status, engineers should consult Renesas technical support or distributor catalogs for equivalent modern PNP transistors with compatible Vceo, hFE, and package requirements.

2SB1117-AZ2SB1117-AZ
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