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2SB1117-T-AZ is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is SMALL SIGNAL BIPOLAR TRANS PNP. Review the specifications below when checking this part for your BOM.
The 2SB1117-T-AZ is a PNP small-signal bipolar junction transistor manufactured by Renesas Electronics Corporation. It features a collector-emitter voltage (VCEO) of 25V and a DC current gain (hFE) range of 135 to 600. The device is designed for through-hole mounting in a 3-SSIP package. It supports a maximum junction temperature of 150°C and has a power dissipation rating of 1W at 100°C. The component is lead-free compliant.
Verify the specific ordering suffix matches the required tape and reel or bulk packaging configuration, as availability may vary by distribution channel. Confirm RoHS compliance status directly with the supplier or manufacturer documentation prior to procurement. Ensure the 3-SSIP package type aligns with the target PCB footprint requirements. Check for any regional export classification restrictions applicable to this semiconductor component before finalizing purchase orders.
Select this component when a PNP transistor with moderate voltage handling and high current gain is required for through-hole assembly. The 25V VCEO rating suits low-voltage signal processing. Consider the 1W power dissipation limit for thermal management in the design phase. The wide hFE range allows for flexibility in biasing networks but requires careful circuit design to account for gain variations across different operating conditions.
This part belongs to Renesas' discrete semiconductor portfolio, specifically within the small-signal bipolar transistor category. It serves as a fundamental active component for analog and digital logic interfacing. The 2SB1117 series provides reliable performance for general electronic applications requiring robust switching characteristics in a standard through-hole form factor.
Consult official Renesas datasheets for direct pin-compatible substitutes. Verify that alternative PNP transistors meet or exceed the 25V VCEO and 1W Pd specifications. Ensure the replacement device supports the same 3-SSIP package and 150°C junction temperature rating to maintain system reliability and mechanical fit.
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