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2SB1120F-TD-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Sanyo. Its product description is PNP EPITAXIAL PLANAR SILICON. Review the specifications below when checking this part for your BOM.
The Sanyo 2SB1120F-TD-E is a PNP epitaxial planar silicon transistor designed for high-current driver applications. It features a collector current capacity of -2.5A and a peak collector current of -5A. The device achieves a low collector-to-emitter saturation voltage with a maximum value of -0.45V. Manufactured by Sanyo Semicon Device, this component utilizes a compact form factor suitable for high-density hybrid integrated circuits.
Verify the specific suffix 'TD-E' against official Sanyo documentation to confirm tape-and-reel packaging and binning specifications. Ensure the source document explicitly lists this exact part number variant rather than generic family members. Cross-reference manufacturer datasheets to validate electrical parameters and package dimensions before procurement.
Select this component when low saturation voltage and high current density are required in a small footprint. Compare the -0.45V VCE(sat) specification against alternative transistors to ensure compatibility with low-voltage logic levels. Verify that the -2.5A continuous current rating meets the load requirements of the target application design.
This transistor belongs to the Sanyo 2SB1120 series of PNP epitaxial planar silicon devices. The series is engineered for applications demanding significant current drive within minimal board space. The specific model represents a packaged variant optimized for automated assembly processes in modern electronic manufacturing.
Consult official substitution guides for equivalent PNP transistors with matching current ratings and saturation voltages. Verify pinout compatibility and thermal characteristics before replacing the original component with any alternative part number.
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