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2SB1120G-TD-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is BIP PNP 2.5A 10V. Review the specifications below when checking this part for your BOM.
The 2SB1120G-TD-E is a PNP epitaxial planar silicon transistor manufactured by onsemi. It features a collector-emitter voltage rating of -50V and a continuous collector current capacity of -2.5A, with a peak pulse current of -5A. The device utilizes FBET process technology to achieve low collector-to-emitter saturation voltage, specified as a maximum of -0.45V. Designed for high-density applications, it is housed in an ultrasmall PCP package.
Verify the specific suffix G-TD-E against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements if mandated by your assembly standards. Cross-reference the datasheet revision date to ensure alignment with current manufacturing parameters and testing criteria.
Select this component for circuits requiring compact PNP switching solutions with low saturation voltage. The -50V rating suits low-voltage logic interfaces. Evaluate thermal management needs based on the small form factor. Confirm that the -2.5A continuous current rating aligns with the load requirements of the target application circuit.
This part belongs to onsemi's lineup of bipolar junction transistors designed for general-purpose switching. The 2SB series typically denotes PNP variants optimized for driver applications. The specific model integrates modern packaging techniques to support miniaturization trends in consumer and industrial electronics hardware design.
Consult official cross-reference guides for direct equivalents. Verify pinout compatibility and electrical parameter margins before substituting with alternative PNP transistors from other manufacturers.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.