2SB1122S-TD-E

Single Bipolar Transistors Overview

The 2SB1122S-TD-E is a PNP bipolar junction transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 2 A. The device utilizes the PCP surface-mount package, which measures 4.5 x 2.5 x 1.5 mm. It has a maximum power dissipation of 1.3 W and a transition frequency of 150 MHz. The component operates at junction temperatures up to +150 °C.

Single Bipolar Transistors Feature Summary

• Adopts FBET process technology for enhanced performance
• Ultrasmall physical dimensions suitable for high-density hybrid IC integration
• Low collector-to-emitter saturation voltage characteristics

Single Bipolar Transistors Applications

• Voltage regulators
• Relay drivers
• Lamp drivers
• General electrical equipment

Single Bipolar Transistors Procurement Notes

Verify the specific suffix TD-E against official onsemi documentation to confirm pinout and packaging details. Ensure compatibility with existing PCB footprints for the PCP (SC-62/SOT-89) form factor. Confirm RoHS compliance status through current manufacturer declarations before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring low-frequency switching or amplification within a compact footprint. The PCP package facilitates automated surface-mount assembly. Evaluate thermal management requirements given the 1.3 W power dissipation limit in enclosed environments.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1122 series of PNP transistors designed for low-voltage, medium-current applications. It serves as a surface-mount alternative to through-hole variants, enabling miniaturization in consumer electronics and industrial control systems where space constraints are critical.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers: 2SB1122.