Single Bipolar Transistors 2SB1122T-TD-E product image

2SB1122T-TD-E

$0.64
  • Description:TRANS PNP 50V 1A PCP
  • Series:-

SKU:ea70a11f4f99 Category: Brand:

  
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2SB1122T-TD-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 50V 1A PCP. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1122T-TD-E

  • Description:TRANS PNP 50V 1A PCP
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 2V
  • Power - Max:500 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:PCP
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1122T-TD-E

2SB1122T-TD-E

Single Bipolar Transistors Overview

The 2SB1122T-TD-E is a PNP epitaxial planar silicon transistor manufactured by onsemi. It features a maximum collector-emitter voltage of -50 V and a continuous collector current of -1 A. The device utilizes the FBET process to achieve low saturation voltage characteristics. It is housed in the PCP surface-mount package, which measures 4.5 x 2.5 x 1.5 mm. The component supports a maximum power dissipation of 500 mW when mounted on a ceramic board and operates within a junction temperature range of -55 °C to +150 °C.

Single Bipolar Transistors Feature Summary

  • Adopts FBET process technology for enhanced performance
  • Provides low collector-emitter saturation voltage
  • Features ultrasmall PCP package for high-density hybrid IC integration

Single Bipolar Transistors Applications

  • Voltage regulators
  • Relay drivers
  • Lamp drivers
  • General electrical equipment

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'TD-E' against official onsemi documentation to confirm tape-and-reel packaging and marking details. Ensure the part number matches the exact PCP package dimensions and thermal characteristics specified in the datasheet. Cross-reference with authorized distributors to validate authenticity and compliance with RoHS standards.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring compact PNP switching or amplification with low saturation voltage. The PCP package is suitable for space-constrained designs needing high-density integration. Consider the 500 mW power dissipation limit and thermal management requirements when designing the circuit layout.

Single Bipolar Transistors Part Context

This transistor belongs to onsemi's lineup of small-signal bipolar junction transistors designed for general-purpose use. The 2SB1122 series is characterized by its adoption of the FBET process, which differentiates it from standard planar transistors by offering improved saturation characteristics in a minimal footprint.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

2SB1122T-TD-E2SB1122T-TD-E
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