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2SB1122T-TD-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 50V 1A PCP. Review the specifications below when checking this part for your BOM.
The 2SB1122T-TD-E is a PNP epitaxial planar silicon transistor manufactured by onsemi. It features a maximum collector-emitter voltage of -50 V and a continuous collector current of -1 A. The device utilizes the FBET process to achieve low saturation voltage characteristics. It is housed in the PCP surface-mount package, which measures 4.5 x 2.5 x 1.5 mm. The component supports a maximum power dissipation of 500 mW when mounted on a ceramic board and operates within a junction temperature range of -55 °C to +150 °C.
Verify the specific suffix 'TD-E' against official onsemi documentation to confirm tape-and-reel packaging and marking details. Ensure the part number matches the exact PCP package dimensions and thermal characteristics specified in the datasheet. Cross-reference with authorized distributors to validate authenticity and compliance with RoHS standards.
Select this component for applications requiring compact PNP switching or amplification with low saturation voltage. The PCP package is suitable for space-constrained designs needing high-density integration. Consider the 500 mW power dissipation limit and thermal management requirements when designing the circuit layout.
This transistor belongs to onsemi's lineup of small-signal bipolar junction transistors designed for general-purpose use. The 2SB1122 series is characterized by its adoption of the FBET process, which differentiates it from standard planar transistors by offering improved saturation characteristics in a minimal footprint.
Public confirmed substitute part numbers are not available in the provided documentation.
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