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2SB1131T-AE is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 20V 5A 3-MP. Review the specifications below when checking this part for your BOM.
The 2SB1131T-AE is a PNP bipolar junction transistor manufactured by onsemi. It features a collector-emitter breakdown voltage of 20V and supports a maximum continuous collector current of 5A. The device utilizes a TO-92VAR through-hole package configuration. Key electrical characteristics include a minimum DC current gain (hFE) of 100 and a maximum power dissipation rating of 1W. The component is designed for operation at temperatures up to 150°C.
Verify the specific suffix 'AE' against official manufacturer documentation, as standard listings often reference the base part number without this suffix. Confirm that the TO-92VAR package variant matches your board layout requirements. Ensure compliance with relevant environmental directives such as RoHS if applicable to your manufacturing process.
Select this component when a low-voltage PNP transistor capable of handling moderate currents is required. The 20V breakdown voltage limits its use in higher voltage rails. Consider the TO-92VAR package for cost-sensitive designs where surface mount space is not a constraint. Evaluate thermal management needs given the 1W power dissipation limit.
This transistor belongs to onsemi's discrete semiconductor lineup, specifically within the bipolar junction transistor category. It serves as a fundamental active component for amplification and switching tasks in consumer electronics and industrial control systems. The device complements NPN counterparts in push-pull configurations.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.