2SB1131T

Single Bipolar Transistors Overview

The 2SB1131T is a PNP bipolar junction transistor manufactured by onsemi. It features a collector-emitter breakdown voltage of 20V and supports a maximum continuous collector current of 5A. The device is housed in a TO-92VAR through-hole package with a maximum power dissipation of 1W. It has a minimum DC current gain (hFE) of 100 and operates at temperatures up to 150°C.

Single Bipolar Transistors Feature Summary

• PNP polarity configuration for switching applications
• Integrated bias resistor network capability
• Through-hole mounting via TO-92VAR package

Single Bipolar Transistors Applications

• General purpose switching circuits
• Amplifier stages requiring PNP control
• Digital logic interface buffering

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'T' against official datasheets to confirm tape-and-reel packaging versus bulk availability. Confirm RoHS compliance status and lead times directly with authorized distributors, as supply chain conditions vary by region and lot date code.

Single Bipolar Transistors Selection Notes

Select this component when a low-voltage PNP switch is required with moderate current handling capabilities. Ensure the application voltage does not exceed the 20V rating. Consider thermal management requirements given the 1W power dissipation limit in the TO-92VAR package.

Single Bipolar Transistors Part Context

This part belongs to onsemi's discrete transistor portfolio, specifically designed for general-purpose electronic applications. It serves as a fundamental switching element in various consumer and industrial electronics, offering reliable performance in compact through-hole designs.

Single Bipolar Transistors Replacement Considerations

Check for direct substitutes such as the 2SB1143T for higher voltage ratings or other PNP transistors in TO-92 packages with similar current and voltage specifications from compatible manufacturers.