2SB1143T

Single Bipolar Transistors Overview

The onsemi 2SB1143T is a PNP bipolar junction transistor housed in a TO-126ML package. It features a maximum collector current of 4 A and a collector-emitter voltage rating of 50 V. The device utilizes FBET and MBIT processes to achieve low saturation voltage and wide safe operating area characteristics. Key electrical parameters include a collector-base voltage of 60 V, an emitter-base voltage of 6 V, and a gain-bandwidth product of 150 MHz. Power dissipation reaches 10 W at 25°C case temperature.

Single Bipolar Transistors Feature Summary

• Adopts FBET and MBIT processes for enhanced performance
• Provides low collector-to-emitter saturation voltage
• Supports large current capacity with wide ASO

Single Bipolar Transistors Applications

• Voltage regulators
• Relay drivers
• Lamp drivers
• Electrical equipment

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'T' against official documentation to confirm bag packing specifications and quantity requirements. Ensure compatibility with TO-126ML through-hole mounting standards. Confirm RoHS compliance status directly from the manufacturer's latest datasheet revision before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high-current switching capabilities within a 50 V limit. The TO-126ML package facilitates effective thermal management up to 10 W dissipation when mounted appropriately. Evaluate the hFE ranking requirements based on specific circuit gain needs, as the device offers multiple gain classifications.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1143/2SD1683 series, which pairs PNP and NPN transistors with identical electrical characteristics. Both devices share the same TO-126ML footprint and process technology. This pairing allows for complementary push-pull configurations in amplifier and driver circuits while maintaining matched performance profiles.

Single Bipolar Transistors Replacement Considerations

The 2SD1683 serves as the direct NPN counterpart within the same series. Verify pinout compatibility and thermal resistance values when substituting or pairing components. Ensure that any alternative replacement matches the 4 A continuous current rating and 50 V breakdown voltage limits.

Single Bipolar Transistors FAQ

What is the DC current gain classification for the 2SB1143T?

The 2SB1143T corresponds to Rank T, which specifies a DC current gain (hFE) range of 200 to 400 at a collector current of 100 mA.

How is the pin configuration defined for the TO-126ML package?

Pin 1 is the Emitter, Pin 2 is the Collector, and Pin 3 is the Base.

What is the typical storage time for this transistor?

The typical storage time (t_stg) is 650 ns under specified test conditions.