2SB1181TLQ

Single Bipolar Transistors Overview

The 2SB1181TLQ is a PNP silicon middle power transistor manufactured by ROHM Semiconductor. It features a maximum collector current of 1 A and a collector-emitter breakdown voltage of -80 V. The device is housed in the CPT3 surface-mount package, which corresponds to the SC-63 form factor. Key electrical characteristics include a minimum DC current gain (hFE) of 120 and a maximum collector-emitter saturation voltage of -0.4 V under specified test conditions. The component supports a maximum operating junction temperature of 150 °C and complies with lead-free and RoHS standards.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient switching performance
• Designed as a complementary pair to specific NPN types such as the 2SD1898 and 2SD1733
• Suitable for middle power driver applications requiring robust current handling

Single Bipolar Transistors Applications

• Middle power driver circuits
• Complementary switching stages paired with 2SD1898 or 2SD1733 transistors
• General-purpose bipolar junction transistor (BJT) applications

Single Bipolar Transistors Procurement Notes

Verify the exact ordering code suffix to confirm packaging configuration, as variations may exist between tape-and-reel and cut-tray formats. Ensure the procurement documentation explicitly references the CPT3/SC-63 package type to avoid substitution errors with similar pinout devices. Confirm compliance status with current environmental directives if required for specific manufacturing regions.

Single Bipolar Transistors Selection Notes

Select this component when an 80V PNP transistor with 1A continuous current capability is required. The low saturation voltage makes it suitable for applications where power dissipation in the on-state must be minimized. Consider the CPT3 package dimensions for PCB layout constraints and verify thermal management requirements for the intended power dissipation levels.

Single Bipolar Transistors Part Context

This part belongs to ROHM's middle power transistor lineup, designed to bridge the gap between small-signal and high-power discrete semiconductors. The 2SB1181 series is engineered for reliability in consumer and industrial electronics, offering a balance of current handling and voltage blocking capabilities within a compact surface-mount footprint.

Single Bipolar Transistors Replacement Considerations

Official complementary NPN replacements are the 2SD1898 and 2SD1733. Verify pin compatibility and thermal characteristics before substituting with generic equivalents.