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2SB1182TLQ is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS PNP 32V 2A CPT3. Review the specifications below when checking this part for your BOM.
The 2SB1182TLQ is a PNP silicon epitaxial planar transistor in a TO-252 (SC-63) package. It features a collector-emitter voltage of -32V and a continuous collector current of -2A. The device exhibits a typical collector-emitter saturation voltage of -0.5V at IC/IB = -2A/-0.2A. DC current gain ranges from 120 to 270 for the Q classification, with a transition frequency of 100MHz. Maximum power dissipation is 1W on a printed circuit board.
Verify the specific hFE bin (Q or R) required for your design, as gain varies between classifications. Confirm the TL suffix indicates the standard tape-and-reel packaging format. Ensure the component meets RoHS compliance standards if applicable to your manufacturing process. Cross-reference the SC-63 footprint dimensions during PCB layout.
Select this component for applications requiring moderate power handling with low saturation voltage. The complementary nature to 2SD1758 makes it suitable for push-pull configurations. Consider the thermal resistance when designing heat dissipation strategies, as power dissipation is limited to 1W without a heatsink.
This part belongs to ROHM's medium-power transistor series designed for general electronic equipment. It shares characteristics with the 2SB1240 but differs in pinout configuration. The device is intended for use in consumer electronics and office automation where reliable switching and amplification are required.
The datasheet explicitly lists the 2SD1758 and 2SD1862 as complementary parts. No direct PNP substitutes are documented in the provided source material.
The typical VCE(sat) is -0.5V when measured at IC/IB = -2A/-0.2A.
No, the product is not designed to be radiation tolerant.
The maximum operating junction temperature is 150°C.
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