Single Bipolar Transistors 2SB1182TLR product image

2SB1182TLR

$1.25
  • Description:TRANS PNP 32V 2A CPT3
  • Series:-

SKU:08f533e6cfab Category: Brand:

  
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2SB1182TLR is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS PNP 32V 2A CPT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1182TLR

  • Description:TRANS PNP 32V 2A CPT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):32 V
  • Vce Saturation (Max) @ Ib, Ic:800mV @ 200mA, 2A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 500mA, 3V
  • Power - Max:10 W
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:CPT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1182TLR

2SB1182TLR

Single Bipolar Transistors Overview

The 2SB1182TLR is a PNP silicon epitaxial planar transistor manufactured by Rohm Semiconductor. It features a collector-emitter voltage of -32V and a continuous collector current of -2A. The device has a maximum power dissipation of 10W at 25°C case temperature. Electrical characteristics include a minimum DC current gain (hFE) of 120, a typical saturation voltage of -0.5V at -2A/-0.2A base drive, and a transition frequency of 100MHz. It utilizes the CPT3 surface-mount package.

Single Bipolar Transistors Feature Summary

  • Low collector-emitter saturation voltage for efficient switching
  • Complements NPN transistors 2SD1758 and 2SD1862

Single Bipolar Transistors Applications

  • General-use electronic equipment
  • Audio visual equipment
  • Office-automation equipment
  • Communication devices
  • Electronic appliances

Single Bipolar Transistors Procurement Notes

Verify the specific hFE bin classification required for the application, as the datasheet defines Q and R grades with distinct gain ranges. Confirm that the CPT3 package dimensions align with the target PCB footprint. Ensure thermal management meets the 10W dissipation limit at the intended operating temperature. Check RoHS compliance status against local regulatory requirements before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a medium-power PNP transistor is needed to complement specific NPN counterparts like the 2SD1758 or 2SD1862. Consider the -32V breakdown voltage and -2A current capacity for general-purpose switching or amplification tasks. Evaluate the CPT3 package suitability for automated surface-mount assembly processes. Verify that the required hFE range matches the available Q or R classifications provided in the ordering specifications.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1182 series of medium-power transistors produced by Rohm Semiconductor. It shares identical electrical ratings with the 2SB1240 variant but differs in physical package geometry. The 'TLR' suffix indicates a tape-and-reel packaging format containing 2500 units per reel, designed for high-volume surface-mount manufacturing lines.

Single Bipolar Transistors Replacement Considerations

The 2SB1240 serves as a functional equivalent within the same family, offering identical electrical performance but utilizing a different physical package outline.

2SB1182TLR2SB1182TLR
$1.25
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