Single Bipolar Transistors 2SB1197A_R1_00001 product image

2SB1197A_R1_00001

$0.38
  • Description:TRANS PNP 50V 3A SOT-23
  • Series:-

SKU:3ccd052dddd4 Category: Brand:

  
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2SB1197A_R1_00001 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is TRANS PNP 50V 3A SOT-23. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1197A_R1_00001

  • Description:TRANS PNP 50V 3A SOT-23
  • Series:-
  • Mfr:Panjit International Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1A, 2V
  • Power - Max:1.25 W
  • Frequency - Transition:180MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1197A_R1_00001

2SB1197A_R1_00001

Single Bipolar Transistors Overview

The Panjit International Inc. 2SB1197A is a silicon PNP epitaxial transistor housed in an SOT-23 package. It supports a collector-emitter voltage of -50V and a continuous collector current of -3A, with a power dissipation rating of 1.25W at 25°C ambient temperature. The device features a low saturation voltage of -0.5V maximum at Ic/Ib = -2A/-200mA. Electrical characteristics include a DC current gain (hFE) ranging from 100 to 300 at Ic = -0.5A, and a transition frequency (fT) typical value of 180MHz. Operating junction temperatures range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • Low Vce(sat) performance for efficient switching
  • High collector current capability up to -3A
  • Excellent DC current gain characteristics
  • Lead-free construction compliant with EU RoHS directive

Single Bipolar Transistors Applications

  • General-purpose switching applications
  • Driver circuits requiring high current handling
  • Amplifier stages utilizing PNP topology

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix and marking code against official Panjit documentation before procurement. Confirm that the component meets the required environmental standards, such as halogen-free molding compounds per IEC61249. Ensure the supplier provides traceability via lot numbers as specified in the manufacturer's disclaimer. Cross-reference the datasheet revision date to ensure compatibility with design specifications.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with -50V breakdown and -3A current capacity is required in a compact SOT-23 form factor. Consider the low saturation voltage for minimizing power loss in switching modes. Evaluate the thermal resistance of 100°C/W for adequate heat dissipation within the system constraints. Verify that the hFE range aligns with the base drive requirements of the target circuit design.

Single Bipolar Transistors Part Context

This part belongs to the family of low Vce(sat) transistors manufactured by Panjit International Inc. Designed for surface-mount assembly, it utilizes a silicon PNP epitaxial structure. The SOT-23 package allows for space-efficient PCB layouts while maintaining robust electrical performance for general electronic applications.

Single Bipolar Transistors Replacement Considerations

Consult official Panjit substitution lists or equivalent manufacturer cross-references for verified alternatives. Ensure any replacement maintains identical pinout configuration, voltage ratings, and package dimensions to guarantee mechanical and electrical compatibility without redesigning the footprint.

2SB1197A_R1_000012SB1197A_R1_00001
$0.38
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