Single Bipolar Transistors 2SB1201T-TL-E product image

2SB1201T-TL-E

  • Description:TRANS PNP 50V 2A TP-FA
  • Series:-

SKU:0b22ebbb9b79 Category: Brand:

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2SB1201T-TL-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 50V 2A TP-FA. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1201T-TL-E

  • Description:TRANS PNP 50V 2A TP-FA
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 100mA, 2V
  • Power - Max:800 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:TP-FA
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1201T-TL-E

2SB1201T-TL-E

Single Bipolar Transistors Overview

The onsemi 2SB1201T-TL-E is a PNP bipolar junction transistor (BJT) designed for surface-mount applications. It features a TP-FA package with four pins and supports a maximum DC collector current of 4 A. The device withstands a maximum collector-emitter voltage of 100 V and a collector-base voltage of -120 V, with an emitter-base voltage limit of -6 V. It dissipates up to 20 W of power and operates at frequencies up to 1 MHz. The component functions as a single transistor with a maximum junction temperature of +150 °C and physical dimensions of 6.5 x 5.5 x 2.3 mm.

Single Bipolar Transistors Feature Summary

  • High current handling capability with a 4 A maximum DC collector current rating
  • Robust voltage tolerance supporting 100 V collector-emitter and 120 V collector-base breakdown
  • Compact TP-FA surface-mount package design facilitating automated assembly

Single Bipolar Transistors Applications

  • General high-current switching circuits
  • Power management modules requiring PNP control
  • Industrial equipment driver stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix TL-E against official datasheets to confirm pinout and electrical characteristics match the intended design requirements. Ensure the supplier provides traceable documentation confirming the component originates from authorized manufacturing channels. Cross-reference the part number with the latest manufacturer notices to identify any obsolescence status or alternative recommendations before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when a PNP BJT with 100 V collector-emitter voltage and 4 A continuous current capacity is required in a slim surface-mount form factor. The TP-FA package offers thermal performance suitable for moderate power dissipation up to 20 W. Consider the 1 MHz transition frequency for general switching speeds rather than high-frequency RF applications. Verify that the -6 V emitter-base voltage limit aligns with the circuit drive conditions.

Single Bipolar Transistors Part Context

This device belongs to the 2SB1201 series of PNP transistors manufactured by onsemi. The series includes variants such as the 2SB1201S-E, which shares similar packaging but differs in voltage and current ratings. The 2SB1201T-TL-E specifically targets applications needing higher voltage and current capabilities within the same compact footprint family, distinguishing it from lower-rated counterparts in the lineup.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for direct equivalents. No confirmed public substitute part numbers are available for this specific model variant.

2SB1201T-TL-E2SB1201T-TL-E

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