2SB1202S-E

Single Bipolar Transistors Overview

The onsemi 2SB1202S-E is a PNP bipolar junction transistor (BJT) designed for high-current switching applications. It features an 8 A maximum DC collector current and a 50 V collector-emitter voltage rating within a TO-251-3 surface-mount package. Key electrical parameters include a 60 V collector-base voltage, 6 V emitter-base voltage, and a minimum DC current gain (hFE) of 70. The device exhibits a low collector-emitter saturation voltage of 250 mV at specified conditions, with a power dissipation capability of 1 W and a transition frequency (fT) of 130 MHz.

Single Bipolar Transistors Feature Summary

• Optimized for high-current switching operations with enhanced linearity
• Low collector-to-emitter saturation voltage for efficient conduction
• Fast switching speed suitable for high-frequency inverter circuits

Single Bipolar Transistors Applications

• Relay drivers
• High-speed inverters
• DC-DC converters
• General high-current switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'E' against the manufacturer's latest documentation to confirm compliance status and availability. Check for End-of-Life notices or production discontinuation alerts prior to finalizing procurement plans. Ensure that the TO-251-3 package dimensions match the target PCB footprint requirements exactly. Confirm RoHS and REACH regulatory compliance details directly from the official datasheet before ordering.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 8 A continuous current capacity and 50 V breakdown voltage is required in a compact surface-mount form factor. The low saturation voltage makes it suitable for applications where minimizing conduction losses is critical. Compare the 130 MHz transition frequency against the circuit's switching speed requirements to ensure adequate performance margins for the intended inverter or converter topology.

Single Bipolar Transistors Part Context

This device belongs to the 2SB1204 series family, which includes variants with different current ratings such as the 2SB1203 and 2SB1204. These transistors are engineered for similar high-current switching roles but differ in their specific current handling capabilities. The 2SB1202S-E represents the lower current option within this specific lineup, sharing the same package and general electrical characteristics while offering reduced power dissipation needs.

Single Bipolar Transistors Replacement Considerations

Direct substitutes may include other PNP BJT packages like the 2SB1203 or 2SD1803 if current ratings align. Verify mechanical compatibility with the TO-251-3 footprint. Cross-reference electrical limits such as VCEO and IC to ensure the replacement meets or exceeds the original design specifications without altering thermal management requirements.