2SB1202T-TL-E

Single Bipolar Transistors Overview

The onsemi 2SB1202T-TL-E is a PNP bipolar junction transistor (BJT) designed for high-current switching applications. It features a maximum DC collector current of 5 A and a maximum collector-emitter voltage of 50 V. The device utilizes a TP surface-mount package with dimensions of 6.5 x 2.3 x 5.5 mm. Key electrical specifications include a maximum power dissipation of 20 W, a maximum operating temperature of +150 °C, and a maximum collector-base voltage of -60 V. The transistor configuration is single, with three pins.

Single Bipolar Transistors Feature Summary

• High current capability combined with high transition frequency for efficient switching
• Low collector-to-emitter saturation voltage to minimize power loss during conduction
• Fast switching speed suitable for high-frequency inverter and converter circuits
• Small and slim package design facilitating compact board layouts

Single Bipolar Transistors Applications

• Relay drivers requiring high current handling
• High-speed inverters for power conversion
• General high-current switching applications in industrial systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix TL-E against official datasheets to confirm tape-and-reel packaging and RoHS compliance status. Ensure thermal management solutions align with the 20 W power dissipation rating at expected ambient temperatures. Cross-reference pinout configurations with PCB footprint designs to prevent installation errors during assembly processes.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits that demand robust PNP switching performance within a 50 V limit. The low saturation voltage makes it suitable for applications where efficiency and heat generation are critical constraints. Consider the TP package size for space-constrained designs compared to larger through-hole alternatives.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1202/2SD1803 series of bipolar transistors from onsemi. The series is engineered for general-purpose high-current switching, offering a balance of high gain linearity and fast response times. It serves as a discrete solution for driving loads in power electronics and signal inversion tasks.

Single Bipolar Transistors Replacement Considerations

The 2SD1203T-E is documented as a related NPN counterpart within the same series family. Verify pin compatibility and electrical symmetry if substituting with other PNP devices from the manufacturer's portfolio.