2SB1203S-H

Single Bipolar Transistors Overview

The onsemi 2SB1203S-H is a PNP bipolar junction transistor housed in a TP (SC-64/TO-251) package. It supports a collector-to-emitter voltage of 50V and a continuous collector current of 5A, with a peak pulse current rating of 8A. The device features a low collector-to-emitter saturation voltage of up to 400mV at 3A and a gain-bandwidth product reaching 180MHz. Switching characteristics include a turn-on time of 50ns, storage time of 500ns, and fall time of 20ns. It operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Low collector-to-emitter saturation voltage for efficient power handling
• High current capability combined with high transition frequency
• Fast switching speed suitable for high-frequency applications
• Small and slim package design facilitating compact circuit layouts

Single Bipolar Transistors Applications

• Relay drivers
• High-speed inverters
• Converters
• General high-current switching applications

Single Bipolar Transistors Procurement Notes

Verify the ordering suffix 'H' confirms compliance with both lead-free and halogen-free manufacturing standards as specified by the manufacturer. Ensure the selected package variant matches the required PCB footprint dimensions for either the TP or TP-FA configuration. Confirm that the specific hFE rank aligns with the target application's gain requirements before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust PNP switching performance with minimal saturation losses. Consider the thermal dissipation capabilities when operating near maximum ratings. Evaluate the available hFE ranks to ensure sufficient current gain for the intended drive conditions. Verify compatibility with the system's voltage levels and switching frequency demands.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1203/2SD1803 series manufactured by onsemi. It serves as the PNP counterpart to the NPN 2SD1803 transistor. Both devices share identical electrical characteristics and are designed for complementary push-pull configurations in power switching circuits.

Single Bipolar Transistors Replacement Considerations

The datasheet lists the 2SB1203S-E as an alternative within the same series. Verify if the non-halogen-free specification of the 'E' suffix meets project requirements. No other direct substitutes are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the maximum collector current rating?

The continuous collector current is rated at 5A, with a peak pulse current capacity of 8A.

Does the 'H' suffix indicate a specific packaging type?

No, the 'H' suffix indicates that the device is lead-free and halogen-free. The package type is determined by the preceding letters (e.g., 'S' for TP).

What is the typical gain-bandwidth product?

The gain-bandwidth product is typically 180MHz at a collector current of 1A and VCE of -5V.