2SB1203S-TL-H

Single Bipolar Transistors Overview

The 2SB1203S-TL-H is a PNP bipolar junction transistor manufactured by onsemi. It features a collector-to-emitter voltage rating of -50 V and a continuous collector current capacity of -5 A. The device utilizes the TP-FA package, corresponding to SC-63 or TO-252 form factors. Electrical characteristics include a DC current gain (hFE) ranging from 70 to 400 depending on the specific rank, with a gain-bandwidth product (fT) typically around 180 MHz at -1 A. The saturation voltage (VCE(sat)) is specified at approximately -280 mV under standard test conditions.

Single Bipolar Transistors Feature Summary

• Low collector-to-emitter saturation voltage for efficient power handling
• High current capability combined with high transition frequency
• Fast switching speed suitable for high-frequency applications
• Small and slim surface-mount package design

Single Bipolar Transistors Applications

• Relay drivers
• High-speed inverters
• Converters
• General high-current switching applications

Single Bipolar Transistors Procurement Notes

Verify the component matches the exact ordering number 2SB1203S-TL-H to ensure correct packaging and electrical specifications. Confirm that the supplier provides documentation verifying compliance with lead-free and halogen-free requirements if the 'H' suffix indicates this status. Check for authenticity through official onsemi channels or authorized distributors to avoid counterfeit components.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring robust PNP switching capabilities with low saturation losses. Consider the thermal dissipation limits and the specific hFE rank required for your application's linearity needs. Ensure the PCB layout accommodates the TP-FA footprint dimensions and thermal pad requirements for optimal heat transfer.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1203/2SD1803 series of bipolar transistors produced by onsemi. The series includes complementary NPN counterparts and variants with different packaging options such as the standard TP bag packing. The technology employs FBET and MBIT processes to achieve fast switching and high current density in a compact form factor.

Single Bipolar Transistors Replacement Considerations

Direct substitutes within the same family include the 2SB1203S-TL-E, which differs primarily in halogen content. Other compatible devices listed in the datasheet include the 2SB1803S-TL-H and 2SB1203T-TL-H, though pinout and package variations must be verified before substitution.