2SB1203T-H

Single Bipolar Transistors Overview

The 2SB1203T-H is a PNP bipolar junction transistor manufactured by onsemi. It features a collector-to-emitter voltage of 50V and a continuous collector current rating of 5A. The device operates with a maximum junction temperature of 150°C and dissipates up to 2W at 25°C case temperature. It utilizes the TP-FA package, equivalent to SC-63 or TO-252, with three terminals: Base, Collector, and Emitter. Electrical characteristics include a DC current gain ranging from 70 to 400 depending on the rank, a gain-bandwidth product of approximately 180MHz, and a low collector-to-emitter saturation voltage.

Single Bipolar Transistors Feature Summary

• Low collector-to-emitter saturation voltage for efficient switching
• High current capability combined with high transition frequency
• Excellent linearity of DC current gain across operating ranges
• Fast switching speed suitable for high-frequency applications
• Compact slim package design facilitating smaller equipment footprints

Single Bipolar Transistors Applications

• Relay drivers
• High-speed inverters
• Converters
• General high-current switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'TL' corresponds to the TP-FA (TO-252) surface-mount package configuration as documented in the official datasheet. Confirm that the 'H' suffix indicates compliance with lead-free and halogen-free requirements if environmental specifications are critical for the intended assembly process.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring robust PNP switching with moderate voltage ratings. Ensure the base drive current is sufficient to maintain the desired saturation level given the specified hFE ranks. Consider thermal management strategies, as power dissipation capabilities are strictly dependent on case temperature conditions rather than ambient air cooling alone.

Single Bipolar Transistors Part Context

This device belongs to the 2SB1203/2SD1803 family of bipolar transistors designed for general-purpose high-current switching. It serves as the PNP counterpart to the NPN 2SD1803 within the same series. The components share similar electrical profiles and packaging options, allowing for complementary push-pull configurations in amplifier and driver stages.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers include 2SB1203S-TL-H and 2SB1803T-TL-H.

Single Bipolar Transistors FAQ

What is the maximum collector current rating for the 2SB1203T-H?

The absolute maximum continuous collector current (IC) is rated at 5 Amperes.

Which package type does the 2SB1203T-H utilize?

It uses the TP-FA package, which corresponds to JEITA/JEDEC standards SC-63 or TO-252.

What is the typical gain-bandwidth product (fT) of this transistor?

The typical gain-bandwidth product is 180 MHz when measured at VCE = -5V and IC = -1A.