2SB1204S-TL-E

Single Bipolar Transistors Overview

The onsemi 2SB1204S-TL-E is a PNP silicon bipolar junction transistor designed for high-current switching applications. It features a TP-FA surface-mount package with four pins and dimensions of 6.5 x 5.5 x 2.3 mm. The device supports a maximum DC collector current of 8 A and a collector-emitter voltage of -50 V. Key electrical parameters include a collector-base voltage of -60 V, an emitter-base voltage of -6 V, and a maximum power dissipation of 20 W. It operates up to a frequency of 1 MHz and withstands temperatures up to +150 °C.

Single Bipolar Transistors Feature Summary

• Low collector-to-emitter saturation voltage for efficient switching
• High current capability combined with high transition frequency
• Excellent linearity of DC current gain (hFE)
• Small and slim package design facilitating compact assembly

Single Bipolar Transistors Applications

• Relay drivers
• High-speed inverters
• Converters and general high-current switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix TL-E against official datasheets to confirm tape-and-reel packaging and binning specifications. Ensure compatibility with RoHS directives if required by the target market. Cross-reference pinout configurations with the TP-FA footprint to prevent mounting errors during PCB assembly.

Single Bipolar Transistors Selection Notes

Select this component when low saturation voltage and high current handling are critical for power efficiency. The TP-FA package offers thermal performance advantages over standard TO-252 variants. Evaluate the 8 A continuous current rating against peak load requirements to ensure reliable operation within the specified temperature range.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1204 series of PNP transistors from onsemi. It shares architectural similarities with other devices in the family, such as the 2SC5706 and 2SA2040, which utilize comparable TP/TP-FA packages. These components are engineered for robust performance in demanding power electronics environments requiring fast switching speeds.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for equivalent PNP transistors with matching current ratings and package types. Verify that any alternative device maintains compatible saturation voltage characteristics and thermal resistance values to ensure circuit integrity without redesign.