2SB1215S-H

Single Bipolar Transistors Overview

The onsemi 2SB1215S-H is a single PNP bipolar junction transistor (BJT) designed for through-hole mounting in the TP package, also identified as TO-251-3 or IPAK. It features a maximum collector current of 3 A and a collector-emitter breakdown voltage of 100 V. The device offers a transition frequency of 130 MHz and a maximum power dissipation of 1 W. Key electrical characteristics include a DC current gain of at least 140 at 500 mA and 5 V, with a collector-emitter saturation voltage of 500 mV at 1.5 A. The component supports a maximum junction temperature of 150°C.

Single Bipolar Transistors Feature Summary

• High-speed switching capability supported by a 130 MHz transition frequency
• Robust current handling with a 3 A continuous collector current rating
• Low saturation voltage to minimize power loss during conduction
• Through-hole construction suitable for standard PCB assembly

Single Bipolar Transistors Applications

• Relay drivers
• High-speed inverters
• DC-DC converters
• General high-current switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and thermal specifications. Ensure the supplier provides valid RoHS compliance documentation. Confirm the package type matches the required footprint, as variations exist within the series. Check for obsolescence notices if sourcing from secondary markets. Validate that the component meets the required operating temperature range for the intended environment.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 100 V blocking capability and 3 A current capacity is required. The low saturation voltage makes it suitable for efficient switching applications. Consider the through-hole package constraints compared to surface-mount alternatives. Evaluate the thermal management requirements given the 1 W power dissipation limit. Compare the transition frequency against circuit speed requirements to ensure adequate performance margins.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1215 series of PNP epitaxial planar silicon transistors manufactured by onsemi. The series is engineered for general-purpose high-current switching tasks. The 'H' suffix typically denotes specific packaging or processing variations within the product line. These devices utilize advanced fabrication processes to achieve low saturation voltages and high current gains.

Single Bipolar Transistors Replacement Considerations

The 2SB1215S-E is a documented variant within the same series. Verify compatibility regarding package dimensions and electrical parameters before substitution. Ensure the replacement part meets all original design specifications.