Single Bipolar Transistors 2SB1215T-E product image

2SB1215T-E

  • Description:TRANS PNP 100V 3A TP
  • Series:-

SKU:b05ee623fb16 Category: Brand:

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2SB1215T-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 100V 3A TP. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1215T-E

  • Description:TRANS PNP 100V 3A TP
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 150mA, 1.5A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 500mA, 5V
  • Power - Max:1 W
  • Frequency - Transition:130MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA
  • Supplier Device Package:TP
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1215T-E

2SB1215T-E

Single Bipolar Transistors Overview

The onsemi 2SB1215T-E is a PNP silicon bipolar junction transistor designed for high-current switching applications. It features a maximum collector current of 3 A and a collector-emitter voltage rating of 100 V. The device offers a low collector-to-emitter saturation voltage of 200 mV and a transition frequency (fT) of 130 MHz, ensuring fast switching performance. Packaged in a TO-251-3 (TP-FA) surface-mount format, it supports a maximum power dissipation of 1 W and operates at temperatures up to +150 °C.

Single Bipolar Transistors Feature Summary

  • Low collector-to-emitter saturation voltage for efficient power handling
  • High transition frequency enabling fast switching speeds
  • Excellent linearity of DC current gain (hFE)
  • Small-sized package facilitating compact circuit designs

Single Bipolar Transistors Applications

  • Relay drivers
  • High-speed inverters
  • General high-current switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'T-E' against official datasheets to confirm tape-and-reel packaging and RoHS compliance status. Confirm availability as the component may be subject to end-of-life notices or limited distribution channels. Ensure the ordering part number matches the required package type and environmental specifications before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring a PNP switch with moderate current capacity and high voltage tolerance. The TO-251-3 package is suitable for surface-mount assembly where space efficiency is critical. Compare the 1 W power dissipation limit against thermal requirements. Consider the complementary NPN device for push-pull configurations if needed.

Single Bipolar Transistors Part Context

This component belongs to the 2SB1215 series of high-current switching transistors manufactured by onsemi. It is part of a family of devices characterized by low saturation voltages and high fT values, intended for use in general-purpose power switching roles within consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

2SB1215T-E2SB1215T-E

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