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2SB1215T-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 100V 3A TP. Review the specifications below when checking this part for your BOM.
The onsemi 2SB1215T-E is a PNP silicon bipolar junction transistor designed for high-current switching applications. It features a maximum collector current of 3 A and a collector-emitter voltage rating of 100 V. The device offers a low collector-to-emitter saturation voltage of 200 mV and a transition frequency (fT) of 130 MHz, ensuring fast switching performance. Packaged in a TO-251-3 (TP-FA) surface-mount format, it supports a maximum power dissipation of 1 W and operates at temperatures up to +150 °C.
Verify the specific suffix 'T-E' against official datasheets to confirm tape-and-reel packaging and RoHS compliance status. Confirm availability as the component may be subject to end-of-life notices or limited distribution channels. Ensure the ordering part number matches the required package type and environmental specifications before finalizing procurement.
Select this component for circuits requiring a PNP switch with moderate current capacity and high voltage tolerance. The TO-251-3 package is suitable for surface-mount assembly where space efficiency is critical. Compare the 1 W power dissipation limit against thermal requirements. Consider the complementary NPN device for push-pull configurations if needed.
This component belongs to the 2SB1215 series of high-current switching transistors manufactured by onsemi. It is part of a family of devices characterized by low saturation voltages and high fT values, intended for use in general-purpose power switching roles within consumer and industrial electronics.
Public confirmed substitute part numbers are not available in the provided documentation.
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