2SB1215T-H

$0.35

Description：TRANS PNP 100V 3A TP
Series：-

SKU:36c91756d978 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

2SB1215T-H is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 100V 3A TP. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1215T-H

Description：TRANS PNP 100V 3A TP
Series：-
Mfr：onsemi
Package：Bulk,Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：3:00 AM
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max)：1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 500mA, 5V
Power - Max：1 W
Frequency - Transition：130MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Supplier Device Package：TP
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SB1215T-H

2SB1215T-H

Single Bipolar Transistors Overview

The onsemi 2SB1215T-H is a PNP bipolar junction transistor (BJT) designed for high-current switching applications. It features a maximum collector-emitter voltage (VCEO) of 100 V and a continuous collector current (Ic) of 3 A. The device operates with a power dissipation (Pd) of 1 W in a TO-251-3 (TP) through-hole package. Key electrical characteristics include a minimum DC current gain (hFE) of 70, an emitter-base voltage (VEBO) of 6 V, and a transition frequency (fT) of 130 MHz. The saturation voltage is specified at 200 mV under standard test conditions.

Single Bipolar Transistors Feature Summary

Low collector-to-emitter saturation voltage for efficient switching
High transition frequency (fT) enabling fast switching speeds
Excellent linearity of DC current gain (hFE)
Small-sized package facilitating compact circuit design

Single Bipolar Transistors Applications

Relay drivers
High-speed inverters
Converters
General high-current switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'T-H' against official onsemi documentation to confirm tape-and-reel packaging and compliance status. Cross-reference the datasheet revision date to ensure parameter accuracy. Confirm RoHS and halogen-free compliance requirements match the target application standards before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring a PNP switch with 100 V blocking capability and 3 A load handling. The TO-251-3 package suits through-hole assembly processes. Ensure thermal management supports 1 W dissipation. Consider the complementary NPN 2SD1815T-H for push-pull configurations requiring matched performance characteristics.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1215 series of low-voltage, high-current PNP transistors manufactured by onsemi. It is engineered for use in power supply and motor control circuits where rapid switching and low saturation losses are critical. The device utilizes silicon technology optimized for high current density and reliable operation in industrial environments.