2SB1216S-H

Single Bipolar Transistors Overview

The onsemi 2SB1216S-H is a PNP bipolar junction transistor (BJT) designed for high-current switching applications. It features a maximum collector current of 4 A and a collector-emitter voltage rating of 100 V. The device operates with a gain-bandwidth product of 130 MHz and a maximum power dissipation of 1 W in the TO-251 package. Key electrical characteristics include a DC current gain (hFE) ranging from 140 to 400 at 0.5 A, a collector-emitter saturation voltage of up to 500 mV at 2 A, and fast switching times with a turn-on time of 100 ns and fall time of 50 ns.

Single Bipolar Transistors Feature Summary

• Low collector-to-emitter saturation voltage for efficient power handling
• High transition frequency (fT) supporting high-speed operation
• Good linearity of DC current gain (hFE)
• Fast switching time suitable for rapid signal processing

Single Bipolar Transistors Applications

• Relay drivers
• High speed inverters
• Converters
• General high current switching applications

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS and halogen-free compliance status as indicated by the suffix. Check for end-of-life notices or alternative sourcing options due to potential discontinuation. Ensure storage conditions meet specified temperature ranges to maintain reliability.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring robust PNP switching capabilities with moderate voltage ratings. Consider the TO-251 package constraints for thermal management and board space. Evaluate hFE requirements against specific load currents to ensure adequate drive capability. Compare switching speeds against application timing requirements.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1216/2SD1816 series, which pairs complementary PNP and NPN transistors. Designed for compactness, it utilizes slim packages like IPAK and DPAK. The series targets general-purpose high-current applications where low saturation voltage and fast switching are critical performance factors.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other PNP transistors with similar 100V/4A ratings and TO-251 packaging. Verify pinout compatibility and thermal resistance values. Check datasheets for matching hFE ranges and switching times to ensure circuit functionality remains unchanged.

Single Bipolar Transistors FAQ

What is the maximum collector current for the 2SB1216S-H?

The maximum continuous collector current is 4 A.

Does the 2SB1216S-H support halogen-free compliance?

Yes, the 'H' suffix indicates the device is both lead-free and halogen-free.

What is the typical gain-bandwidth product (fT)?

The gain-bandwidth product is typically 180 MHz, with a minimum of 130 MHz under specified test conditions.