2SB1216S-TL-E

Single Bipolar Transistors Overview

The onsemi 2SB1216S-TL-E is a PNP bipolar junction transistor in the TP-FA (DPAK) surface-mount package. It features a maximum collector current of 4 A and a collector-emitter voltage rating of 100 V. The device exhibits a low collector-to-emitter saturation voltage, with a maximum value of 500 mV at 2 A collector current and 0.2 A base current. Electrical characteristics include a gain-bandwidth product of 180 MHz and a high DC current gain ranging from 140 to 400 depending on the rank. Thermal management allows for a continuous power dissipation of 20 W when the case temperature is maintained at 25°C.

Single Bipolar Transistors Feature Summary

• Low collector-to-emitter saturation voltage for efficient switching
• High transition frequency supporting fast switching applications
• Good linearity of DC current gain across operating ranges
• Compact slim package design facilitating set miniaturization

Single Bipolar Transistors Applications

• Relay drivers
• High-speed inverters
• Converters
• General high-current switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. The 'TL' suffix indicates the DPAK/TP-FA package supplied in tape and reel format. Confirm RoHS compliance status through the manufacturer's latest datasheet revision or environmental declaration documents before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring high current handling capability combined with low saturation voltage to minimize power loss during conduction. Ensure the application operates within the specified 150°C junction temperature limit. Verify that the required drive current can supply the necessary base current to maintain the transistor in deep saturation under expected load conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1216 series, which pairs with the NPN 2SD1816 transistor. Both devices share identical electrical ratings and physical dimensions, allowing for complementary push-pull configurations in amplifier and driver stages. The series is designed for general-purpose high-current switching tasks where compact footprint and thermal performance are critical constraints.

Single Bipolar Transistors Replacement Considerations

Direct functional substitutes within the same family include the 2SB1216T-TL-E variant, which utilizes the IPAK/TP package instead of the TP-FA form factor while maintaining identical electrical parameters.