2SB1216T-E

Single Bipolar Transistors Overview

The onsemi 2SB1216T-E is a PNP bipolar junction transistor (BJT) designed for high-current switching applications. It features a maximum collector current of 4 A and a collector-emitter voltage rating of 100 V, with a collector-base voltage of 120 V. The device operates in the DPAK (TP-FA) surface-mount package, providing a thermal dissipation capacity of 20 W at 25°C case temperature. Key electrical characteristics include a gain-bandwidth product (fT) of 180 MHz and a collector-emitter saturation voltage (VCE(sat)) of up to 400 mV under specified conditions.

Single Bipolar Transistors Feature Summary

• Low collector-to-emitter saturation voltage for efficient power handling
• High transition frequency (fT) supporting fast switching operations
• Good linearity of DC current gain (hFE)
• Small and slim package design facilitating compact circuit layouts

Single Bipolar Transistors Applications

• Relay drivers
• High-speed inverters
• Converters
• General high-current switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. The 'T' suffix indicates tape and reel packaging, while 'TL' specifies the DPAK/TP-FA form factor. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as availability may vary by region and production cycle.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust PNP switching capabilities with low saturation voltage. Ensure the application stays within the 4 A continuous collector current limit and 100 V breakdown voltage. Consider the thermal management requirements associated with the DPAK package when calculating power dissipation limits under varying ambient temperatures.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1216 series of bipolar transistors manufactured by onsemi. It is paired with the NPN counterpart 2SD1816 in the same datasheet publication. The device utilizes silicon technology and is available in both IPAK and DPAK packages, catering to different mounting and thermal needs in electronic circuits.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other PNP transistors from the same family such as the 2SB1216S-E or variants with different packaging suffixes like 2SB1216T-TL-E. Cross-referencing with similar high-current PNP devices from other manufacturers requires verifying pinout compatibility and ensuring electrical parameters meet or exceed the original specifications.