2SB1216T-TL-H

Single Bipolar Transistors Overview

The onsemi 2SB1216T-TL-H is a PNP bipolar junction transistor in the DPAK (TP-FA) surface-mount package. It features a collector-emitter voltage of 100 V and a continuous collector current of 4 A. The device offers a low collector-to-emitter saturation voltage, high transition frequency (fT), and fast switching characteristics. Electrical specifications include a maximum collector-base breakdown voltage of 120 V and an emitter-base breakdown voltage of 6 V. Typical performance metrics show an fT of 180 MHz at -10 V and -0.5 A, with a typical VCE(sat) of 150 mV under specified test conditions.

Single Bipolar Transistors Feature Summary

• Low collector-to-emitter saturation voltage for efficient power handling
• Small and slim package design facilitating compact set construction
• High transition frequency (fT) supporting high-speed operations
• Fast switching time suitable for rapid signal processing

Single Bipolar Transistors Applications

• Relay drivers
• High speed inverters
• Converters
• General high current switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm the package type and shipping quantity. The 'TL' suffix indicates the DPAK/TP-FA package configuration. Confirm that the required packing format matches the datasheet's tape and reel specifications. Ensure compliance with environmental standards such as lead-free and halogen-free requirements if indicated by the suffix 'H'. Always validate component authenticity through authorized distribution channels.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 100 V rating and 4 A current capacity is required in a surface-mount form factor. Consider the low VCE(sat) for thermal management efficiency in high-current paths. Evaluate the switching speed and fT against the target circuit frequency requirements. Compare package dimensions against available PCB real estate constraints before finalizing the design integration.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1216 series of bipolar transistors manufactured by onsemi. It is functionally paired with the NPN counterpart 2SD1816 within the same product family. The device utilizes epitaxial planar silicon technology optimized for general-purpose high-current switching. The DPAK package provides robust thermal dissipation capabilities relative to its physical footprint.

Single Bipolar Transistors Replacement Considerations

Direct functional substitutes within the same family include the 2SD1816 for complementary NPN applications. Verify pinout compatibility and electrical ratings when considering cross-manufacturer alternatives. Ensure any replacement maintains the required DPAK package dimensions and thermal characteristics for direct board-level interchangeability.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at 100 V.

Does the TL suffix indicate a specific package type?

Yes, the TL suffix denotes the DPAK (TP-FA) surface-mount package configuration.

What is the typical gain-bandwidth product?

The typical gain-bandwidth product (fT) is 180 MHz under standard test conditions.