2SB12520Q

Single Bipolar Transistors Overview

The Panasonic 2SB1252Q is a silicon PNP epitaxial planar type Darlington power transistor designed for high-power amplification. It features a TO-220F-A1 package with a full-pack design allowing heat sink installation via a single screw. The device supports a collector current of -5A and peak current of -8A, with a collector power dissipation of 45W at 25°C. Key electrical characteristics include a collector-emitter voltage (VCEO) of -100V, forward current transfer ratio (hFE) ranging from 5,000 to 30,000 depending on the rank, and low saturation voltages.

Single Bipolar Transistors Feature Summary

• Optimized for high-power audio applications such as 35 W Hi-Fi output stages
• High forward current transfer ratio ensuring efficient signal amplification
• Low collector-emitter saturation voltage for improved power efficiency
• Full-pack package construction facilitating direct mounting to heat sinks

Single Bipolar Transistors Applications

• Power amplification circuits
• Hi-Fi audio output stages
• General electronic equipment requiring high-current switching

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors or official Panasonic channels. Confirm the specific hFE rank (Q or P) required for your circuit design against the datasheet specifications. Ensure compliance with RoHS directives if applicable to your manufacturing standards. Check for any updates regarding maintenance or discontinuation status directly from the manufacturer before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high gain and significant current handling capabilities in a compact form factor. Consider the thermal management requirements carefully, as the 45W dissipation rating depends heavily on heat sink usage and ambient temperature conditions. Evaluate the hFE rank necessary for your specific drive conditions to ensure optimal performance within the amplifier stage.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SB series of PNP Darlington transistors. These components are engineered for robust performance in power amplification tasks. The 2SB1252 specifically targets applications demanding high reliability and efficient heat dissipation, leveraging its epitaxial planar structure and durable packaging solution for long-term operational stability in consumer electronics.

Single Bipolar Transistors Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Cross-reference electrical parameters such as VCEO, IC, and hFE ranges to ensure compatibility. Verify package dimensions and pinout configurations match existing board layouts. Contact Panasonic sales for the most up-to-date Product Standards to confirm availability and specification changes.