2SB1322A0A

Single Bipolar Transistors Overview

The Panasonic 2SB1322A0A is a silicon PNP epitaxial planar transistor designed for low-frequency power amplification. It features a collector-emitter voltage of -50 V, a continuous collector current of -1 A, and a peak collector current of -1.5 A. The device provides a maximum collector power dissipation of 1 W at 25°C and operates with a junction temperature up to 150°C. Its transition frequency reaches 200 MHz, making it suitable for general-purpose amplification tasks.

Single Bipolar Transistors Feature Summary

• Designed specifically for low-frequency power amplification applications
• Utilizes a silicon PNP epitaxial planar construction for reliable performance
• Capable of handling a continuous collector current of 1 A

Single Bipolar Transistors Applications

• Low-frequency power amplifier circuits
• General-purpose electronic equipment
• Office equipment signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and tape configuration. Confirm the current lifecycle status as maintenance or discontinued products may have limited availability. Ensure compliance with export control regulations if applicable to your region.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a 1 A current rating and 50 V breakdown voltage is required. Verify that the MT-2-A1 through-hole package fits the design constraints. Consider the complementary 2SD1994A NPN transistor if a push-pull configuration is needed.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SB1322 series of small-signal bipolar transistors. It serves as the PNP counterpart to the 2SD1994A NPN transistor, allowing for matched complementary pairs in amplifier designs. The series is characterized by high reliability and stable electrical parameters across operating temperatures.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SD1994A as the complementary device. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the complementary transistor for the 2SB1322A?

The 2SD1994A is the designated complementary NPN transistor for the 2SB1322A.

What is the maximum collector power dissipation?

The maximum collector power dissipation is 1 W at an ambient temperature of 25°C.

What is the transition frequency of this transistor?

The transition frequency (fT) is specified at 200 MHz under standard test conditions.