2SB1386T100R

Single Bipolar Transistors Overview

The ROHM 2SB1386T100R is a PNP silicon epitaxial planar transistor designed for low-frequency applications. It features a collector-emitter voltage of -20V and a continuous collector current rating of -5A. The device achieves a typical saturation voltage of -0.35V at an IC/IB ratio of -4A/-0.1A, ensuring efficient switching performance. DC current gain ranges from 120 to 390 depending on the specific binning classification. Packaged in the MPT3 (SOT-89) surface-mount format with a taping unit quantity of 1000 pieces, it supports junction temperatures up to 150°C.

Single Bipolar Transistors Feature Summary

• Epitaxial planar construction provides robust structural integrity for reliable operation.
• Low collector-emitter saturation voltage minimizes power dissipation during conduction states.
• High DC current gain characteristics support effective signal amplification and driver control.

Single Bipolar Transistors Applications

• General-purpose low-frequency transistor circuits
• Driver stages for complementary NPN transistors such as the 2SD2098 series
• Switching applications requiring high current handling capabilities

Single Bipolar Transistors Procurement Notes

Verify the specific hFE binning code (P, Q, or R) required for your design, as the T100 suffix indicates standard taping but does not define gain range. Confirm that the MPT3 package dimensions align with your PCB footprint constraints. Ensure thermal management strategies account for the specified power dissipation limits under actual operating conditions.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with -20V breakdown and -5A current capacity is needed. It serves as a direct complement to specific NPN counterparts like the 2SD2098. Consider the MPT3 package size if space is limited compared to larger through-hole options. Verify that the transition frequency meets the requirements for your specific switching speed needs.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1386 family, which includes variants like the 2SB1412 and 2SB1326 sharing identical electrical specifications. The T100 ordering suffix specifically denotes the tape-and-reel packaging configuration containing 1000 units per reel. This distinguishes it from bulk or other packaging formats available within the same electrical specification group.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly lists the 2SD2098, 2SD2118, and 2SD2097 as complementary parts rather than direct substitutes. No alternative PNP part numbers are provided in the official documentation for direct replacement.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter saturation voltage?

The maximum VCE(sat) is -1.0V when measured at a collector current of -0.5A and a base current of -0.01A.

How is the DC current gain classified?

The hFE values are classified into three bins: Type P (82 to 180), Type Q (120 to 270), and Type R (180 to 390).

What is the transition frequency of the device?

The transition frequency (fT) is typically 120MHz and has a minimum guaranteed value of 60MHz under specified test conditions.