Single Bipolar Transistors 2SB1412-P-TP product image

2SB1412-P-TP

  • Description:TRANS PNP 30V 5A DPAK
  • Series:-

SKU:ff70a3d73df0 Category: Brand:

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2SB1412-P-TP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS PNP 30V 5A DPAK. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1412-P-TP

  • Description:TRANS PNP 30V 5A DPAK
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 100mA, 4A
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:82 @ 500mA, 2V
  • Power - Max:1 W
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:DPAK
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1412-P-TP

2SB1412-P-TP

Single Bipolar Transistors Overview

The MCC 2SB1412-P-TP is a PNP silicon epitaxial transistor housed in a DPAK package. It features a collector-emitter voltage rating of -30 V and supports a continuous collector current of -5.0 A with a power dissipation capacity of 1.0 W. The device exhibits a DC current gain (hFE) range of 82 to 390, depending on the specific bin classification. Key electrical parameters include a collector-base breakdown voltage of -30 V, an emitter-base cutoff current of -0.5 µA, and a transition frequency of up to 20 MHz.

Single Bipolar Transistors Feature Summary

  • Low collector saturation voltage for efficient switching
  • Excellent current-to-gain characteristics across operating ranges
  • Epoxy material meets UL 94 V-0 flammability rating

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Power management applications requiring high current handling
  • Amplifier stages utilizing PNP topology

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix matches the required specifications. Confirm the presence of the -TP designation indicates tape and reel packaging containing 2500 pieces per reel. Ensure the procurement channel is an authorized distributor to guarantee genuine parts and full traceability as mandated by manufacturer policies.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor capable of handling -5.0 A continuous current is required within a DPAK footprint. Consider the hFE binning options (P, Q, R) if specific gain thresholds are necessary for the circuit design. Verify thermal management requirements align with the 1.0 W power dissipation limit at the intended ambient temperature.

Single Bipolar Transistors Part Context

This part belongs to the Micro Commercial Components 2SB1412 series of PNP silicon epitaxial transistors. The series is designed for general-purpose applications, offering robust performance in compact surface-mount packages. The -P suffix specifically denotes the DC current gain ranking within the available product classifications.

Single Bipolar Transistors Replacement Considerations

Consult official datasheets for cross-reference candidates such as the 2SB1412-Q or 2SB1412-R variants, which share identical pinouts and maximum ratings but differ in DC current gain ranges.

2SB1412-P-TP2SB1412-P-TP

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