Single Bipolar Transistors 2SB1427T100U product image

2SB1427T100U

  • Description:TRANS NPN 20V 2A MPT3
  • Series:-

SKU:eb2fae2d7d10 Category: Brand:

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2SB1427T100U is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 20V 2A MPT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1427T100U

  • Description:TRANS NPN 20V 2A MPT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:450mV @ 150mA, 1.5A
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 500mA, 2V
  • Power - Max:2 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:MPT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1427T100U

2SB1427T100U

Single Bipolar Transistors Overview

The 2SB1427T100U is a single PNP silicon bipolar junction transistor manufactured by ROHM Semiconductor. It features a collector-emitter breakdown voltage of 20 V and supports a continuous collector current of 2 A. The device operates within a temperature range up to +150°C TJ. Key electrical parameters include a transition frequency (fT) of 90 MHz, a DC current gain (hFE) ranging from 120 to 390, and a collector-emitter saturation voltage of 500 mV at specified currents. Power dissipation is rated at 2 W.

Single Bipolar Transistors Feature Summary

  • Low saturation voltage for efficient switching performance
  • High DC current gain characteristics for signal amplification
  • Robust thermal stability supporting high-temperature operation

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Amplifier stages in consumer electronics
  • Power management applications requiring PNP control

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific packaging variants such as tape and reel configurations prior to ordering. Ensure design-in approval aligns with the manufacturer's current lifecycle recommendations to avoid obsolescence risks during production phases.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 20 V rating and 2 A current capacity is required. Consider the 90 MHz bandwidth for medium-speed applications. Evaluate the 2 W power dissipation capability against thermal constraints. Compare hFE ranges against circuit gain requirements to ensure adequate drive margins.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1427 series of single PNP transistors. It utilizes a TO-243AA package, also known as MPT3, suitable for surface-mount assembly. The device is designed for general-purpose electronic applications within the ROHM semiconductor portfolio, offering a balance of voltage handling and current drive capabilities.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pin compatibility and electrical parameter overlaps with potential alternatives before substitution.

2SB1427T100U2SB1427T100U

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