2SB1457,T6TOTOF(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SB1457,T6TOTOF(J is a silicon PNP epitaxial planar transistor configured as a Darlington pair in a JEDEC TO-92MOD package. It features a high DC current gain of 2000 minimum at −1 A collector current, with a maximum collector-emitter saturation voltage of −1.5 V under the same conditions. The device supports a continuous collector current of −2 A and withstands collector-emitter voltages up to −100 V. Designed for micro motor drive, hammer drive, and power amplifier applications, it operates within a junction temperature range of −55 °C to 150 °C.

Single Bipolar Transistors Feature Summary

• Darlington configuration providing high DC current gain for efficient signal amplification
• Low collector-emitter saturation voltage to minimize power loss during switching
• Robust thermal performance supporting operation up to 150 °C junction temperature

Single Bipolar Transistors Applications

• Micro motor drive circuits
• Hammer drive mechanisms
• Power amplifier stages

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status through official Toshiba channels, as markings indicate potential variations. Confirm environmental compliance against specific project requirements before integration. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines to ensure long-term operational stability under varying thermal and electrical loads.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high current gain in a compact TO-92MOD footprint. Ensure circuit design accommodates the specified −100 V collector-emitter breakdown voltage and −2 A continuous current limits. Consider the transition frequency characteristics when designing for high-speed switching or amplification tasks within the defined safe operating area.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's lineup of silicon PNP epitaxial transistors designed for general electronics and specific power switching needs. The Darlington structure distinguishes it from standard single-transistor designs by offering superior current handling capabilities relative to its physical size, making it suitable for driving moderate loads directly.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba documentation for verified equivalent part numbers. Cross-referencing requires matching the Darlington configuration, TO-92MOD package, and electrical ratings such as −100 V VCEO and −2 A IC limits to ensure functional compatibility.

Single Bipolar Transistors FAQ

What is the minimum DC current gain (hFE) specified for the 2SB1457?

The datasheet specifies a minimum DC current gain (hFE) of 2000 when tested at a collector-emitter voltage of −2 V and a collector current of −1 A.

Does the 2SB1457 include internal resistors?

Yes, the equivalent circuit diagram indicates the presence of internal base-emitter and base-collector resistors integrated within the Darlington structure.

What is the maximum collector power dissipation rating?

The absolute maximum rating for collector power dissipation (PC) is 900 mW at an ambient temperature of 25 °C.