2SB1481(TOJS,Q,M)

Single Bipolar Transistors Overview

The 2SB1481 is a PNP silicon epitaxial transistor designed for switching applications. It features a collector-emitter voltage of -100 V and a continuous collector current rating of ±4 A, with a pulse capability of ±6 A. The device provides a minimum DC current gain (hFE) of 2000 at -1.5 A and maintains a maximum saturation voltage of -1.5 V at -3 A. Power dissipation reaches 25 W at a case temperature of 25°C. It utilizes a TO-220 package.

Single Bipolar Transistors Feature Summary

• High DC current gain ensuring efficient control in switching circuits
• Low collector-emitter saturation voltage to minimize power loss
• Integrated base resistors simplifying drive circuit design

Single Bipolar Transistors Applications

• General-purpose switching applications
• Complementary pairing with the 2SD2241 NPN transistor

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with Toshiba Semiconductor and Storage representatives, as the datasheet indicates this information is available upon request. Confirm that the specific ordering suffix matches the required lead-free or standard configuration. Ensure the component is sourced from authorized distributors to guarantee authenticity and adherence to storage conditions.

Single Bipolar Transistors Selection Notes

Select this component when high current gain and low saturation voltage are critical for switching efficiency. The integrated base resistors reduce external component count. Verify that the -100 V breakdown voltage meets the system requirements. Consider thermal management capabilities, as the 25 W dissipation rating depends on maintaining an appropriate case temperature.

Single Bipolar Transistors Part Context

This part belongs to the family of PNP epitaxial planar transistors manufactured by Toshiba Semiconductor and Storage. It is specifically engineered for robust performance in general electronics applications. The device complements the 2SD2241 NPN counterpart, facilitating balanced push-pull configurations in driver circuits.

Single Bipolar Transistors Replacement Considerations

The 2SD2241 is documented as the complementary NPN transistor for this series. No other direct substitute part numbers are confirmed in the provided documentation.

Single Bipolar Transistors FAQ

What is the minimum DC current gain specified for the 2SB1481?

The minimum DC current gain (hFE) is 2000 when measured at a collector current of -1.5 A and a collector-emitter voltage of -2 V.

Does the 2SB1481 include internal components?

Yes, the equivalent circuit diagram indicates the presence of built-in base resistors, approximately 4.5 kΩ and 300 Ω.

What is the maximum collector current rating?

The absolute maximum DC collector current is ±4 A, while the pulse collector current can reach ±6 A under specified conditions.