2SB14880PA

Single Bipolar Transistors Overview

The Panasonic 2SB1488PA is a silicon PNP triple diffusion planar transistor designed for power switching applications. It features a collector-base voltage of -400 V and a continuous collector current rating of -0.5 A, with a peak current capacity of -1 A. The device operates within a junction temperature range up to 150 °C and dissipates 1 W of power. Electrical characteristics include a forward current transfer ratio (hFE) ranging from 80 to 280 depending on the rank, a transition frequency of 25 MHz, and a collector-emitter saturation voltage of -0.50 V maximum at specified conditions.

Single Bipolar Transistors Feature Summary

• High-speed switching capability suitable for demanding circuit requirements
• High collector-base voltage rating providing robust operation under high reverse bias
• High forward current transfer ratio ensuring efficient control
• Radial taping supply option facilitating automated assembly processes

Single Bipolar Transistors Applications

• Power switching circuits
• General electronic equipment
• Office equipment
• Communications equipment

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'PA' against official documentation to confirm package type and tape configuration. Check the manufacturer's lifecycle status page for maintenance or discontinuation notices before finalizing procurement plans. Ensure compliance with RoHS directives as stated in the datasheet.

Single Bipolar Transistors Selection Notes

Select this component when high voltage isolation and moderate current handling are required in a compact form factor. Consider the hFE rank requirements for your specific gain needs. Evaluate thermal management capabilities based on the 1 W dissipation limit and ensure the operating environment stays within the specified temperature ranges.

Single Bipolar Transistors Part Context

This transistor belongs to Panasonic's lineup of silicon PNP triple diffusion planar types intended for power switching. It complements other devices in the series by offering high breakdown voltage and fast switching speeds in a radial package suitable for through-hole mounting on printed circuit boards.

Single Bipolar Transistors Replacement Considerations

Consult official replacement lists for verified substitutes. Cross-reference electrical parameters such as voltage ratings, current limits, and package dimensions to ensure compatibility with existing designs.