2SB1495,Q(J

Single Bipolar Transistors Overview

The Toshiba 2SB1495 is a silicon PNP epitaxial planar transistor designed for high-power switching applications. It features a minimum DC current gain (hFE) of 2000 at VCE = −2 V and IC = −2 A, with a maximum collector-emitter saturation voltage of −1.5 V at IC = −1.5 A. The device supports a continuous collector current of −3 A and a pulsed current of −5 A, with a collector-emitter breakdown voltage of −100 V. It utilizes a TO-3PL package and offers a complementary match to the 2SD2257 NPN transistor.

Single Bipolar Transistors Feature Summary

• High DC current gain capability ensuring efficient signal amplification in switching circuits
• Low saturation voltage characteristic reducing power loss during conduction states
• Epitaxial planar construction providing robust thermal performance and reliability

Single Bipolar Transistors Applications

• High-power switching circuits requiring rapid transitions
• Complementary amplifier stages paired with NPN counterparts
• General-purpose power amplification in consumer electronics

Single Bipolar Transistors Procurement Notes

Verify component authenticity through official Toshiba Semiconductor channels or authorized distributors. Confirm RoHS compliance status directly with the supplier as indicated in the datasheet restrictions section. Ensure ordering suffixes match specific packaging requirements. Review the latest reliability handbook for derating guidelines before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when high current gain and low saturation voltage are critical for switching efficiency. Consider the TO-3PL package for adequate heat dissipation in high-power scenarios. Verify compatibility with complementary NPN devices like the 2SD2257 for balanced circuit designs. Evaluate thermal management requirements against the specified junction temperature limits.

Single Bipolar Transistors Part Context

This transistor belongs to Toshiba's lineup of high-power switching devices utilizing silicon epitaxial technology. It serves as a specialized solution for applications demanding high gain and fast switching speeds within general electronics equipment. The component complements other discrete semiconductors in power supply and audio amplifier architectures.

Single Bipolar Transistors Replacement Considerations

The 2SD2257 is documented as the direct complementary counterpart. No other substitute part numbers are explicitly confirmed in the provided documentation.

Single Bipolar Transistors FAQ

What is the minimum DC current gain specification?

The minimum DC current gain (hFE) is 2000, measured at VCE = −2 V and IC = −2 A.

Is this component suitable for medical instruments?

No, the datasheet restricts usage in medical instruments and other safety devices requiring extraordinarily high quality and reliability.

What is the maximum collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage (VCE(sat)) is −1.5 V at a collector current of −1.5 A.