2SB1495,Q(M

Single Bipolar Transistors Overview

The 2SB1495 is a silicon PNP epitaxial planar transistor designed for high-power switching applications. It features a collector-emitter voltage rating of -100 V and a continuous collector current capacity of -3 A, with a pulsed current limit of -5 A. The device achieves a minimum DC current gain (hFE) of 2000 at specific test conditions. Key electrical parameters include a maximum collector-emitter saturation voltage of -1.5 V and a maximum base-emitter saturation voltage of -2.0 V. Thermal management allows for a junction temperature up to 150 °C and a collector power dissipation of 20 W when the case is maintained at 25 °C.

Single Bipolar Transistors Feature Summary

• High DC current gain capability ensuring efficient control in switching circuits
• Low collector-emitter saturation voltage for reduced power loss during conduction
• Complementary pairing available with the 2SD2257 NPN transistor

Single Bipolar Transistors Applications

• High-power switching circuits
• General electronics applications including computer and office equipment
• Domestic appliances and industrial robotics

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with the manufacturer or authorized sales representatives prior to procurement, as compliance details are not explicitly defined within the provided datasheet text. Ensure that design implementations strictly adhere to the specified absolute maximum ratings and thermal derating curves to maintain product reliability and prevent malfunction under heavy load conditions.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current amplification and fast switching performance. The high hFE specification minimizes required drive current, while the low saturation voltage improves efficiency. Consider the complementary 2SD2257 for push-pull configurations. Verify thermal requirements against the 20 W dissipation limit at 25 °C case temperature.

Single Bipolar Transistors Part Context

Manufactured by Toshiba Semiconductor and Storage, the 2SB1495 belongs to a series of silicon PNP epitaxial transistors optimized for power switching. It utilizes a JEDEC 2-10R1A package, typically identified as TO-220AB, facilitating effective heat dissipation through the collector terminal. This component serves as a robust solution for general-purpose power amplification and switching tasks in consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

The 2SD2257 is documented as the complementary N-channel counterpart for use in paired switching applications.