2SB1565FU6E

Single Bipolar Transistors Overview

The 2SB1565 is a PNP silicon epitaxial planar transistor housed in a TO-220FN package. It supports a collector-emitter voltage of -60V and a continuous collector current of -3A, with a pulse current rating of -6A. The device features low saturation voltage (max 1.5V at IC/IB = -2A/-0.2A) and a DC current gain range of 100 to 320. Transition frequency is typically 50MHz. Power dissipation reaches 2W at 25°C ambient or 25°C case temperature.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient power amplification
• Wide safe operating area (SOA) supporting high current pulses
• High DC current gain with defined classification ranks

Single Bipolar Transistors Applications

• Low frequency power amplifier circuits
• Stereophonic output stages
• Power supply stabilization modules

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank required for your design, as the component is classified into two distinct gain ranges: EF (100 to 200) and F (160 to 320). Confirm the basic ordering unit matches your production needs, which is specified as 500 pieces per tape. Ensure the application remains within standard electronic equipment parameters, avoiding high-reliability sectors without prior consultation.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring robust PNP switching or linear amplification within a -60V limit. The TO-220FN package facilitates effective thermal management for power dissipation up to 2W. Consider the transition frequency and capacitance characteristics when designing for signals approaching 5MHz. Verify that the peripheral circuit constants align with the absolute maximum ratings to prevent junction temperature exceedance.

Single Bipolar Transistors Part Context

This transistor serves as the complementary pair to the NPN 2SD2394, facilitating balanced push-pull configurations in audio and power stages. Designed for general-purpose power amplification, it utilizes a planar structure to ensure stable electrical characteristics. The device is intended for ordinary electronic equipment such as audio visual gear and office automation systems.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SD2394 as the direct NPN complement. No other substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What are the available DC current gain classifications?

The device is classified into two hFE ranks: EF (100 to 200) and F (160 to 320).

What is the maximum pulse collector current?

The maximum non-repetitive pulse collector current is -6A, measured with a pulse width of 100ms.

Is this component suitable for automotive use?

No. The product is designed for ordinary electronic equipment and requires special consultation for high-reliability applications like transportation equipment.