2SC2235-Y,F(J

Description：TRANS NPN 120V 0.8A TO-92MOD
Series：-

SKU:2ac9d42ffd50 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC2235-Y,F(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 120V 0.8A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2235-Y,F(J

Description：TRANS NPN 120V 0.8A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：800 mA
Voltage - Collector Emitter Breakdown (Max)：120 V
Vce Saturation (Max) @ Ib, Ic：1V @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 100mA, 5V
Power - Max：900 mW
Frequency - Transition：120MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC2235-Y,F(J

2SC2235-Y,F(J

Single Bipolar Transistors Overview

The Toshiba 2SC2235 is a silicon NPN epitaxial planar transistor manufactured using the PCT process. It features a maximum collector-emitter voltage of 120 V and a continuous collector current rating of 800 mA. The device dissipates up to 900 mW at 25°C ambient temperature, with a transition frequency of 120 MHz typical. It operates within a junction temperature range of -55°C to 150°C and utilizes a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

Complementary pairing with the 2SA965 PNP transistor for push-pull configurations
High breakdown voltage capability suitable for high-voltage switching applications
Fast transition frequency optimized for audio driver stages

Single Bipolar Transistors Applications

Audio power amplifier circuits
Driver stage amplifiers
General-purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status through official Toshiba channels, as markings indicate specific lot codes for compliance. Confirm the hFE classification suffix matches design requirements, noting that 'Y' indicates a gain range of 120 to 240. Review the Toshiba Semiconductor Reliability Handbook for derating concepts before finalizing designs.

Single Bipolar Transistors Selection Notes

Select this component for general electronics requiring high voltage handling in small signal applications. Ensure thermal management accommodates the 900 mW dissipation limit. Verify that the required DC current gain falls within the specified Y-classification range of 120 to 240 for optimal performance in driver stages.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's discrete semiconductor lineup designed for audio and switching tasks. It serves as the complementary counterpart to the 2SA965 PNP device, facilitating balanced circuit designs. The component is housed in a standard TO-92MOD plastic package suitable for through-hole mounting.

Single Bipolar Transistors Replacement Considerations

The 2SA965 is documented as the direct complementary match. No other substitute part numbers are confirmed in the provided datasheet.

Single Bipolar Transistors FAQ

What is the hFE classification for the 'Y' suffix?

The 'Y' suffix indicates a DC current gain (hFE) range of 120 to 240 when tested at VCE = 5 V and IC = 100 mA.

Is this component intended for aerospace or medical use?

No. The product is explicitly restricted from unintended uses such as aerospace, medical equipment, nuclear facilities, and transportation control systems.