Single Bipolar Transistors 2SC2235-Y(T6CN,A,F product image

2SC2235-Y(T6CN,A,F

  • Description:TRANS NPN 120V 0.8A TO-92MOD
  • Series:-

SKU:e481b6a45d55 Category: Brand:

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2SC2235-Y(T6CN,A,F is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 120V 0.8A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2235-Y(T6CN,A,F

  • Description:TRANS NPN 120V 0.8A TO-92MOD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 100mA, 5V
  • Power - Max:900 mW
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC2235-Y(T6CN,A,F

2SC2235-Y(T6CN,A,F

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC2235 is a silicon NPN epitaxial transistor manufactured using the PCT process. It features a JEDEC TO-92MOD package with a maximum collector-emitter voltage of 120 V and a continuous collector current rating of 800 mA. The device provides a typical transition frequency of 120 MHz and a maximum collector power dissipation of 900 mW at 25°C ambient temperature. It is designed for audio power amplifier and driver stage applications.

Single Bipolar Transistors Feature Summary

  • Complementary to the 2SA965 PNP transistor
  • Utilizes Silicon NPN Epitaxial Type (PCT Process)
  • Designed for Audio Power Amplifier Applications
  • Suitable for Driver Stage Amplifier Applications

Single Bipolar Transistors Applications

  • Audio Power Amplifier Applications
  • Driver Stage Amplifier Applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate specific lot number classifications. Confirm the hFE binning suffix matches design requirements, noting that 'Y' indicates a gain range of 120 to 240. Ensure compliance with general electronics application restrictions and avoid use in unintended high-reliability sectors without explicit permission.

Single Bipolar Transistors Selection Notes

Select this component for low-to-medium power audio amplification circuits requiring high breakdown voltage. Consider the complementary 2SA965 for push-pull configurations. Evaluate thermal derating curves for operation above 25°C ambient temperature. Verify hFE classification 'Y' meets circuit gain specifications. Check safe operating area limits for pulsed versus continuous DC operation.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SC series of general-purpose NPN transistors. It is specifically engineered for audio frequency applications where moderate power handling and high voltage ratings are necessary. The TO-92MOD package offers a compact form factor suitable for through-hole mounting on standard printed circuit boards.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA965 as the complementary PNP counterpart. No other direct substitute part numbers are documented in the provided source material.

2SC2235-Y(T6CN,A,F2SC2235-Y(T6CN,A,F

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