2SC2235-Y(T6FJT,AF

Single Bipolar Transistors Overview

The Toshiba 2SC2235 is a silicon NPN epitaxial planar transistor utilizing the PCT process, housed in a JEDEC TO-92MOD package. It features a collector-emitter breakdown voltage of 120 V and a maximum collector current of 800 mA. The device offers a transition frequency of 120 MHz and a collector power dissipation of 900 mW at 25°C ambient temperature. DC current gain ranges from 80 to 240 depending on the classification suffix.

Single Bipolar Transistors Feature Summary

• Complementary pairing with the 2SA965 PNP transistor for push-pull configurations
• High-voltage capability suitable for demanding switching and amplification tasks
• Optimized transition frequency for audio driver stage applications

Single Bipolar Transistors Applications

• Audio power amplifier circuits
• Driver stage amplifier designs
• General-purpose high-voltage switching

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix (e.g., Y) against the datasheet hFE classification table to ensure correct DC current gain range. Confirm RoHS compatibility status directly with Toshiba sales representatives as indicated in the marking section. Review the Reliability Handbook for derating concepts before finalizing design parameters.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with moderate current handling is required for audio or driver stages. Ensure the application operates within the 900 mW power dissipation limit and consider thermal management for junction temperatures up to 150°C. Verify complementary circuit requirements match the 2SA965 specifications.

Single Bipolar Transistors Part Context

This component belongs to Toshiba's discrete bipolar transistor lineup designed for general electronics and audio equipment. It utilizes an epitaxial planar structure for improved performance over older technologies. The device is intended for use in computers, office equipment, and home appliances, excluding unintended high-reliability uses.

Single Bipolar Transistors Replacement Considerations

The 2SA965 is documented as the complementary PNP counterpart. No other direct substitute part numbers are confirmed in the provided documentation.

Single Bipolar Transistors FAQ

What is the difference between the standard 2SC2235 and the 2SC2235-Y?

The 'Y' suffix indicates a specific DC current gain (hFE) classification ranging from 120 to 240, whereas the standard version typically covers a broader range starting from 80.

Is this transistor suitable for aerospace or medical applications?

No. The datasheet explicitly prohibits use in equipment requiring extraordinarily high reliability, such as aerospace, medical, or nuclear facilities, unless specifically permitted.

What is the maximum collector-base voltage rating?

The absolute maximum rating for collector-base voltage (VCBO) is 120 V at an ambient temperature of 25°C.