2SC2235-Y(T6KMATFM

Single Bipolar Transistors Overview

The Toshiba 2SC2235 is a silicon NPN epitaxial planar transistor manufactured using the PCT process. It features a collector-emitter breakdown voltage of 120 V and a maximum continuous collector current of 800 mA. The device provides a DC current gain (hFE) ranging from 80 to 240, with a transition frequency of 120 MHz. It dissipates up to 900 mW of power within a TO-92MOD package and operates at junction temperatures up to 150°C.

Single Bipolar Transistors Feature Summary

• Complementary pairing with the 2SA965 PNP transistor for push-pull configurations
• High-voltage capability suitable for driver stage amplifier applications
• Optimized for audio power amplifier circuits

Single Bipolar Transistors Applications

• Audio power amplifier stages
• Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate potential variations. Confirm that the specific lot number aligns with required environmental standards before integration into designs subject to regulatory compliance. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and methods to ensure long-term operational stability under heavy loads.

Single Bipolar Transistors Selection Notes

Select this component when designing general electronics applications requiring high-voltage switching or amplification. Ensure the design accounts for the absolute maximum ratings, particularly the 900 mW power dissipation limit. Verify that the hFE classification matches the circuit requirements, as the 'Y' suffix indicates a gain range of 120 to 240. Consider thermal management strategies to maintain junction temperature within safe operating limits.

Single Bipolar Transistors Part Context

This component belongs to Toshiba's discrete semiconductor product line, specifically designed for general electronics applications. It serves as a complementary pair to the 2SA965, facilitating balanced circuit designs in consumer electronics, office equipment, and measuring instruments. The device is not intended for use in aerospace, medical, or automotive safety systems without explicit permission.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA965 as the complementary PNP transistor. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SC2235?

The DC current gain (hFE) ranges from 80 to 240, depending on the specific classification.

Is the 2SC2235 suitable for nuclear facility applications?

No, the product is not intended for use in equipment requiring extraordinarily high reliability, such as nuclear facilities, unless specifically permitted by Toshiba.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is 120 V.