2SC2235-Y,T6USNF(M

Single Bipolar Transistors Overview

The 2SC2235 is a silicon NPN epitaxial transistor manufactured by Toshiba Semiconductor and Storage using the PCT process. It features a collector-emitter breakdown voltage of 120 V, a maximum collector current of 800 mA, and a collector power dissipation of 900 mW at 25°C. The device exhibits a transition frequency of 120 MHz and a DC current gain ranging from 80 to 240 depending on classification. It operates within a junction temperature range up to 150°C and utilizes a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

• Complementary pairing with the 2SA965 PNP transistor for push-pull configurations
• High-voltage capability suitable for demanding switching and amplification tasks
• Optimized transition frequency for audio driver stage applications

Single Bipolar Transistors Applications

• Audio power amplifier circuits
• Driver stage amplifier applications
• General-purpose switching in consumer electronics

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate specific environmental compliance variations. Confirm the hFE binning code (O or Y) matches circuit requirements for precise gain control. Ensure the TO-92MOD package dimensions align with existing board layouts before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when designing complementary pairs requiring high voltage handling and moderate current drive capabilities. Evaluate the thermal derating curves carefully if operating near the 900 mW limit. Consider the specific hFE classification needed for consistent performance across production batches in linear amplifier designs.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's general-purpose discrete semiconductor lineup designed for robust performance in consumer electronics. It serves as the NPN counterpart to the 2SA965, facilitating balanced design approaches in audio output stages. The device represents standard industry solutions for mid-power amplification tasks.

Single Bipolar Transistors Replacement Considerations

The 2SA965 is the designated complementary PNP match. Verify pinout compatibility and electrical symmetry when substituting in existing designs. Cross-reference absolute maximum ratings to ensure equivalent safety margins are maintained during replacement procedures.

Single Bipolar Transistors FAQ

What is the complementary transistor for the 2SC2235?

The 2SA965 is the designated complementary PNP transistor for use in push-pull configurations.

How does the hFE classification affect performance?

Classification 'Y' indicates a DC current gain range of 120 to 240, while 'O' ranges from 80 to 160, allowing selection based on required amplification levels.

What is the maximum collector power dissipation?

The maximum collector power dissipation is 900 mW at an ambient temperature of 25°C.