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2SC2235-Y,USNHF(M is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 120V 0.8A TO-92MOD. Review the specifications below when checking this part for your BOM.
The Toshiba Semiconductor and Storage 2SC2235-Y,USNHF(M) is a silicon NPN epitaxial transistor manufactured using the PCT process. It features a collector-emitter voltage of 120 V and a maximum collector current of 800 mA. The device provides a DC current gain (hFE) ranging from 120 to 240 for the Y classification. Electrical characteristics include a transition frequency of 120 MHz and a collector power dissipation of 900 mW at 25°C ambient temperature. The component is housed in a JEDEC TO-92MOD package.
Verify the exact ordering suffix against the manufacturer's official documentation to confirm specific binning or environmental compliance status. Confirm that the USNHF(M) designation aligns with the required RoHS compatibility level, as standard markings may vary. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity and traceability of the PCT process manufacturing lot.
Select this component when designing circuits requiring high-voltage handling up to 120 V combined with moderate current capabilities of 800 mA. The specified hFE range of 120 to 240 ensures consistent gain performance for linear amplification tasks. Consider the complementary 2SA965 if a matched pair configuration is necessary for push-pull output stages.
This part belongs to the 2SC2235 series of general-purpose NPN transistors produced by Toshiba Semiconductor and Storage. The series utilizes a triple-diffused PCT process to achieve stable electrical characteristics suitable for consumer electronics. The TO-92MOD package provides a compact form factor for through-hole mounting on printed circuit boards.
The datasheet explicitly identifies the 2SA965 as the complementary PNP counterpart. No other direct substitute part numbers are documented in the provided source material.
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