SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
2SC2236-Y-AP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS NPN 30V 1.5A TO-92MOD. Review the specifications below when checking this part for your BOM.
The MCC 2SC2236-Y is an NPN plastic-encapsulated transistor housed in a TO-92MOD package. It features a collector-emitter voltage (VCEO) of 30 V, a continuous collector current (IC) of 1.5 A, and power dissipation (PD) of 0.9 W. The device offers a DC current gain (hFE) range of 160 to 320 at IC=10mA. Electrical characteristics include a transition frequency (fT) of 120 MHz and a collector-base cutoff current (ICBO) of 0.1 µA. Operating junction temperature ranges from -55°C to +150°C with a thermal resistance of 139°C/W.
Verify the specific ordering suffix when sourcing components. The standard part number does not indicate halogen-free status; add the '-HF' suffix if required by project specifications. Confirm availability through authorized distributors to ensure genuine parts with full traceability. Check for updated datasheet revisions before finalizing designs.
Select this component for applications requiring an NPN transistor with a 30 V collector-emitter voltage and up to 1.5 A continuous current. The TO-92MOD package suits through-hole mounting. Ensure the design accounts for the 0.9 W power dissipation limit and derating curves above 25°C ambient temperature. Verify that the hFE range of 160 to 320 meets circuit biasing requirements.
This NPN transistor belongs to Micro Commercial Components' general-purpose discrete semiconductor lineup. It utilizes a plastic-encapsulated construction designed for robustness in standard electronic assemblies. The TO-92MOD form factor provides a compact solution for low-to-medium power applications where leaded mounting is preferred over surface-mount technologies.
Direct substitutes must match the NPN polarity, 30 V VCEO, 1.5 A IC rating, and TO-92MOD package. Verify pinout compatibility (Emitter, Collector, Base) as defined in the internal structure diagram. Cross-reference electrical parameters such as hFE and fT to ensure functional equivalence in the target circuit.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.