Single Bipolar Transistors 2SC2258 product image

2SC2258

  • Description:TRANS NPN 250V 0.1A TO-126B-A1
  • Series:-

SKU:bfe2c39a6105 Category: Brand:

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2SC2258 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN 250V 0.1A TO-126B-A1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2258

  • Description:TRANS NPN 250V 0.1A TO-126B-A1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):250 V
  • Vce Saturation (Max) @ Ib, Ic:1.2V @ 5mA, 50mA
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 40mA, 20V
  • Power - Max:4 W
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126B-A1
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC2258

2SC2258

Single Bipolar Transistors Overview

The Panasonic 2SC2258 is a silicon NPN triple diffusion planar power transistor designed for high breakdown voltage general amplification. It features a collector-emitter voltage of 250 V and a continuous collector current rating of 100 mA. The device operates with a transition frequency of 100 MHz and dissipates up to 4 W on a heat sink. Packaged in the TO-126B-A1 format, it eliminates the need for an insulation plate during installation.

Single Bipolar Transistors Feature Summary

  • High collector-emitter voltage capability for robust operation
  • High transition frequency suitable for general amplification
  • TO-126B package design allowing direct heat sink mounting without insulation plates

Single Bipolar Transistors Applications

  • General electronic equipment amplification
  • Office equipment signal processing
  • Communications equipment circuits
  • Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the specific lifecycle status before procurement, as the datasheet indicates maintenance or discontinuation stages may apply. Confirm RoHS compliance requirements against the EU directive standards referenced in the documentation. Ensure the final specifications match the latest Product Standards available from the manufacturer prior to purchasing.

Single Bipolar Transistors Selection Notes

Select this component when a high breakdown voltage of 250 V is required alongside moderate current handling capabilities. The TO-126B package is appropriate for designs needing efficient thermal management without additional insulating hardware. Verify that the application environment remains within standard operating temperatures and does not require specialized reliability ratings.

Single Bipolar Transistors Part Context

This part belongs to the category of silicon NPN power transistors utilizing triple diffusion planar technology. It serves as a general-purpose amplification device intended for standard applications in consumer and industrial electronics rather than specialized aerospace or life-support systems.

Single Bipolar Transistors Replacement Considerations

Consult official manufacturer resources for confirmed substitute part numbers. Do not assume cross-compatibility with other NPN transistors without verifying electrical parameters and package dimensions against the original specifications.

2SC22582SC2258

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