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2SC2383-O(T6OMI,FM is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 160V 1A TO-92MOD. Review the specifications below when checking this part for your BOM.
The Toshiba 2SC2383-O(T6OMI,FM) is a silicon NPN epitaxial transistor manufactured using the PCT process. It features a collector-emitter breakdown voltage of 160 V and supports a continuous collector current of 1 A with a power dissipation rating of 900 mW. The device operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) ranging from 60 to 320, a transition frequency (fT) between 20 MHz and 100 MHz, and a maximum collector-emitter saturation voltage of 1.5 V.
Verify that the ordering suffix matches the exact requested configuration. Confirm RoHS compatibility status directly with the manufacturer or authorized distributor, as environmental compliance may vary by production lot. Ensure the package type aligns with the target PCB footprint before finalizing procurement orders.
Select this component when designing circuits requiring high voltage handling and substantial current drive capabilities. The specified hFE range provides flexibility for various biasing requirements. Verify thermal management strategies are adequate to maintain junction temperatures within the specified safe operating area during continuous operation.
This part belongs to the 2SC2383 series of general-purpose NPN transistors. It is specifically engineered for use in consumer electronics, particularly television sets. The device utilizes a JEDEC TO-92MOD plastic encapsulated package, providing a compact form factor suitable for standard through-hole mounting on printed circuit boards.
The datasheet explicitly identifies the 2SA1013 as the complementary counterpart. No other direct substitute part numbers are documented in the provided source material.
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