2SC2383-Y,T6KEHF(M

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC2383-Y,T6KEHF(M is an NPN silicon epitaxial transistor in a TO-92MOD package. It features a collector-emitter breakdown voltage of 160 V, a continuous collector current rating of 1 A, and a power dissipation capacity of 900 mW at 25°C. The device offers a DC current gain (hFE) range of 60 to 320, with the 'Y' suffix indicating a specific bin of 160 to 320. Its transition frequency reaches up to 100 MHz, and it operates within a junction temperature range of -55°C to 150°C.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability for robust operation
• Large continuous collector current handling
• Complementary pairing with 2SA1013 PNP transistor

Single Bipolar Transistors Applications

• Color TV vertical deflection output circuits
• Color TV class-B sound output applications

Single Bipolar Transistors Procurement Notes

Verify the exact ordering code against the datasheet to ensure correct packaging and environmental compliance status. Confirm that the 'Y' hFE classification matches circuit requirements. Check RoHS compatibility details directly with Toshiba sales representatives as indicated in the documentation. Ensure the TO-92MOD package dimensions align with the target PCB layout before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component for line-operated television designs requiring high voltage tolerance and moderate current drive. The complementary nature with the 2SA1013 simplifies push-pull stage design. Verify thermal management strategies are adequate for the 900 mW dissipation limit under expected operating conditions. Consider the specific hFE binning if precise gain control is necessary for the application.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's lineup of general-purpose discrete semiconductors designed for consumer electronics. It utilizes a PCT process for improved performance characteristics. The device is specifically engineered to meet the demands of analog output stages in traditional broadcast equipment, providing reliable switching and amplification capabilities within its specified electrical limits.

Single Bipolar Transistors Replacement Considerations

The 2SA1013 serves as the direct complementary counterpart for this device. Other NPN transistors with similar voltage ratings and current capabilities may be considered if pinout compatibility is maintained. Verify that any substitute meets the required hFE and transition frequency specifications for the intended application.

Single Bipolar Transistors FAQ

What does the 'Y' suffix indicate in the part number?

The 'Y' suffix denotes a specific DC current gain (hFE) classification ranging from 160 to 320.

Is this transistor suitable for high-frequency RF amplification?

No, it is optimized for audio and deflection output applications with a transition frequency of up to 100 MHz, not high-frequency RF use.

What is the maximum collector-base voltage rating?

The absolute maximum collector-base voltage (VCBO) rating is 160 V.